P

Inventor

CHEN SHENG-HSIUNG

TW128 patents
⚠️ This page may combine multiple inventors who share the name “CHEN SHENG-HSIUNG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TAIWAN SEMICONDUCTOR MFG CO LTD

27 patents
US11423204B1Aug 23, 2022

System and method for back side signal routing

TAIWAN SEMICONDUCTOR MFG CO LTD8 citations86
US11275886B2Mar 15, 2022

Integrated circuit and method of forming same and a system

TAIWAN SEMICONDUCTOR MFG CO LTD8 citations85
US11449656B2Sep 20, 2022

Method of designing semiconductor device

TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US11030372B2Jun 8, 2021

Method for generating layout diagram including cell having pin patterns and semiconductor device based on same

TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US10990745B2Apr 27, 2021

Integrated circuit and method of forming same and a system

TAIWAN SEMICONDUCTOR MFG CO LTD7 citations84
US10878165B2Dec 29, 2020

Method for generating layout diagram including protruding pin cell regions and semiconductor device based on same

TAIWAN SEMICONDUCTOR MFG CO LTD10 citations84
US10868538B1Dec 15, 2020

Logic cell structure and integrated circuit with the logic cell structure

TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US10664565B2May 26, 2020

Method and system of expanding set of standard cells which comprise a library

TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US10289794B2May 14, 2019

Layout for semiconductor device including via pillar structure

TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US10262981B2Apr 16, 2019

Integrated circuit, system for and method of forming an integrated circuit

TAIWAN SEMICONDUCTOR MFG CO LTD7 citations84
US10552568B2Feb 4, 2020

Method of modifying cell and global connection routing method

TAIWAN SEMICONDUCTOR MFG CO LTD6 citations83
US10157840B2Dec 18, 2018

Integrated circuit having a high cell density

TAIWAN SEMICONDUCTOR MFG CO LTD5 citations83
US12014131B2Jun 18, 2024

Integrated circuit and method of forming same and a system

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11861282B2Jan 2, 2024

Integrated circuit fin structure manufacturing method

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11727185B2Aug 15, 2023

System for designing semiconductor device

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11681853B2Jun 20, 2023

Integrated circuit and method of forming same and a system

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11669669B2Jun 6, 2023

Circuit layouts and related methods

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11636249B2Apr 25, 2023

Integrated circuit and layout method for standard cell structures

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11637098B2Apr 25, 2023

Pin modification for standard cells

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US11574107B2Feb 7, 2023

Method for manufacturing a cell having pins and semiconductor device based on same

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US11080453B2Aug 3, 2021

Integrated circuit fin layout method, system, and structure

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11037920B2Jun 15, 2021

Pin modification for standard cells

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10977418B2Apr 13, 2021

Semiconductor device with cell region, method of generating layout diagram and system for same

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10903239B2Jan 26, 2021

Integrated circuit device with improved layout

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US10817643B2Oct 27, 2020

Method of designing semiconductor device and system for implementing the method

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10777505B2Sep 15, 2020

Method of fabricating integrated circuit having staggered conductive features

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US10776557B2Sep 15, 2020

Integrated circuit structure

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73

TAIWAN SEMICONDUCTOR MFG

19 patents
US6399486B1Jun 4, 2002

Method of improved copper gap fill

TAIWAN SEMICONDUCTOR MFG116 citations98
US6191023B1Feb 20, 2001

Method of improving copper pad adhesion

TAIWAN SEMICONDUCTOR MFG92 citations98
US6420258B1Jul 16, 2002

Selective growth of copper for advanced metallization

TAIWAN SEMICONDUCTOR MFG62 citations96
US6313003B1Nov 6, 2001

Fabrication process for metal-insulator-metal capacitor with low gate resistance

TAIWAN SEMICONDUCTOR MFG82 citations96
US6560862B1May 13, 2003

Modified pad for copper/low-k

TAIWAN SEMICONDUCTOR MFG65 citations94
US7026721B2Apr 11, 2006

Method of improving copper pad adhesion

TAIWAN SEMICONDUCTOR MFG24 citations93
US6865948B1Mar 15, 2005

Method of wafer edge damage inspection

TAIWAN SEMICONDUCTOR MFG19 citations93
US6573187B1Jun 3, 2003

Method of forming dual damascene structure

TAIWAN SEMICONDUCTOR MFG23 citations93
US6466427B1Oct 15, 2002

Microelectronic capacitor structure compatible with copper containing microelectronic conductor layer processing

TAIWAN SEMICONDUCTOR MFG41 citations93
US6384442B1May 7, 2002

Fabrication process for metal-insulator-metal capacitor with low gate resistance

TAIWAN SEMICONDUCTOR MFG38 citations93
US6303459B1Oct 16, 2001

Integration process for Al pad

TAIWAN SEMICONDUCTOR MFG25 citations93
US6303498B1Oct 16, 2001

Method for preventing seed layer oxidation for high aspect gap fill

TAIWAN SEMICONDUCTOR MFG44 citations93
US6235637B1May 22, 2001

Method for marking a wafer without inducing flat edge particle problem

TAIWAN SEMICONDUCTOR MFG19 citations93
US6872627B2Mar 29, 2005

Selective formation of metal gate for dual gate oxide application

TAIWAN SEMICONDUCTOR MFG41 citations92
US6518166B1Feb 11, 2003

Liquid phase deposition of a silicon oxide layer for use as a liner on the surface of a dual damascene opening in a low dielectric constant layer

TAIWAN SEMICONDUCTOR MFG41 citations91
US6489684B1Dec 3, 2002

Reduction of electromigration in dual damascene connector

TAIWAN SEMICONDUCTOR MFG50 citations91
US6350667B1Feb 26, 2002

Method of improving pad metal adhesion

TAIWAN SEMICONDUCTOR MFG40 citations90
US6818533B2Nov 16, 2004

Epitaxial plasma enhanced chemical vapor deposition (PECVD) method providing epitaxial layer with attenuated defects

TAIWAN SEMICONDUCTOR MFG25 citations86
US6660577B2Dec 9, 2003

Method for fabricating metal gates in deep sub-micron devices

TAIWAN SEMICONDUCTOR MFG11 citations74

NAT SCIENCE COUNCIL

2 patents

SYNOPSYS TAIWAN CO LTD

1 patent

CHANG FONG-YUAN

1 patent

Showing the top 50 of 128 patents by PatentIndex Score.