Inventor

ZHANG QINGCHUN

US85 patents

⚠️ This page may combine multiple inventors who share the name “ZHANG QINGCHUN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

ZHANG QINGCHUN

ZHANG QINGCHUN

Wide band-gap MOSFETs having a heterojunction under gate trenches thereof and related methods of forming such devices

Junction barrier Schottky diodes with current surge capability

Transistor with A-face conductive channel and trench protecting well region

Semiconductor devices with heterojunction barrier regions and methods of fabricating same

Transistor with A-face conductive channel and trench protecting well region

High power insulated gate bipolar transistors

Junction Barrier Schottky diodes with current surge capability

High breakdown voltage wide band-gap MOS-gated bipolar junction transistors with avalanche capability

Semiconductor devices including Schottky diodes having doped regions arranged as islands and methods of fabricating same

Diffused junction termination structures for silicon carbide devices and methods of fabricating silicon carbide devices incorporating same

Power switching devices having controllable surge current capabilities

Double guard ring edge termination for silicon carbide devices

Transistors with semiconductor interconnection layers and semiconductor channel layers of different semiconductor materials

Semiconductor devices including schottky diodes having overlapping doped regions and methods of fabricating same

Optically assist-triggered wide bandgap thyristors having positive temperature coefficients

Insulated gate bipolar transistors including current suppressing layers

Power semiconductor devices having selectively doped JFET regions and related methods of forming such devices

Mesa termination structures for power semiconductor devices and methods of forming power semiconductor devices with mesa termination structures

Mesa termination structures for power semiconductor devices including mesa step buffers

CREE INC

Semiconductor devices including schottky diodes with controlled breakdown

Transistor with A-face conductive channel and trench protecting well region

Power semiconductor devices with mesa structures and buffer layers including mesa steps

Insulated gate bipolar conduction transistors (IBCTS) and related methods of fabrication

Semiconductor transistor with P type re-grown channel layer

Passivation structure for semiconductor devices

Power schottky diodes having local current spreading layers and methods of forming such devices

High power insulated gate bipolar transistors

Schottky structure employing central implants between junction barrier elements

Super junction power semiconductor devices formed via ion implantation channeling techniques and related methods

Transistor structures having reduced electrical field at the gate oxide and methods for making same

Super surge diodes

Schottky diode

Schottky structure employing central implants between junction barrier elements

Semiconductor devices with heterojunction barrier regions and methods of fabricating same

Diffused junction termination structures for silicon carbide devices

Schottky diode structure with silicon mesa and junction barrier Schottky wells

Methods of forming silicon carbide switching devices including P-type channels

HENNING JASON PATRICK

Schottky diode

Power module for supporting high current densities

Schottky diode employing recesses for elements of junction barrier array

RYU SEI-HYUNG

High voltage insulated gate bipolar transistors with minority carrier diverter

Monolithic high voltage switching devices

HULL BRETT ADAM

Methods of forming semiconductor devices including epitaxial layers and related structures

TELEDYNE SCIENT & IMAGING LLC

Semiconductor device with a conduction enhancement layer

BOEING CO

U-shape metal-oxide-semiconductor (UMOS) gate structure for high power MOS-based semiconductor devices

DAS MRINAL KANTI

Silicon carbide power devices including P-type epitaxial layers and direct ohmic contacts

HENNING JASON

Junction termination structures including guard ring extensions and methods of fabricating electronic devices incorporating same

TELEDYNE LICENSING LLC

Silicon carbide-based device contact and contact fabrication method

SEMICONDUCTOR MFG INT SHANGHAI CORP

Semiconductor structure and fabrication method thereof

WOLFSPEED INC

Superjunction power semiconductor devices formed via ion implantation channeling techniques and related methods