Inventor

LIN HSING-LIEN

TW113 patents

⚠️ This page may combine multiple inventors who share the name “LIN HSING-LIEN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

LIN HSING-LIEN

TAIWAN SEMICONDUCTOR MFG CO LTD

Switching layer scheme to enhance RRAM performance

Embedded memory device with a composite top electrode

Oxide film scheme for RRAM structure

Recap layer scheme to enhance RRAM performance

Switching layer scheme to enhance RRAM performance

Memory device and method of manufacturing the same

RRAM structure

Switching layer scheme to enhance RRAM performance

Film scheme to improve peeling in chalcogenide based PCRAM

Switching layer scheme to enhance RRAM performance

High K scheme to improve retention performance of resistive random access memory (RRAM)

Resistive RAM structure and method of fabrication thereof

Semiconductor device and method of forming the same

Semiconductor MEMS structure and manufacturing method thereof

MIM/RRAM structure with improved capacitance and reduced leakage current

Resistive random access memory (RRAM) structure

Resistive random access memory (RRAM) cell with a composite capping layer

RRAM cell bottom electrode formation

Organic photo diode with dual electron blocking layers

MIM capacitors with improved reliability

Protective sidewall techniques for RRAM

FeRAM with laminated ferroelectric film and method forming same

Semiconductor MEMS structure

Memory device structure with protective element

Method to reduce breakdown failure in a MIM capacitor

Resistive memory cell having a low forming voltage

Resistive memory cell with switching layer comprising one or more dopants

Top-electrode barrier layer for RRAM

Method to reduce breakdown failure in a MIM capacitor

Memory device structure

Organic photosensitive device with an electron-blocking and hole-transport layer

Method to enhance electrode adhesion stability

Method of forming memory device with diffusion barrier and capping layer

Image sensors with organic photodiodes and methods for forming the same

Method to improve MIM device performance

Semiconductor MEMS structure

MIM capacitor and method of forming the same

Method of fabricating an organic photodiode with dual electron blocking layers

High yield RRAM cell with optimized film scheme

Organic photosensitive device with an electron-blocking and hole-transport layer

Film scheme for MIM device

MIM/RRAM structure with improved capacitance and reduced leakage current

Memory structure having top electrode with protrusion

Image sensors with organic photodiodes and methods for forming the same

Metal-insulator-metal (MIM) capacitor techniques

Techniques to inhibit delamination from flowable gap-fill dielectric

Techniques to inhibit delamination from flowable gap-fill dielectric

TAIWAN SEMICONDUCTOR MFG

Low tunneling current MIM structure and method of manufacturing same

Method of forming MIM capacitor electrodes

VANGUARD INT SEMICONDUCT CORP

Passivation layer etching process for memory arrays with fusible links