Inventor
TSANG PAUL J
US20 patents
Patents
20 patentsUS4419809ADec 13, 1983
Fabrication process of sub-micrometer channel length MOSFETs
IBM332 citations99
US4366613AJan 4, 1983
Method of fabricating an MOS dynamic RAM with lightly doped drain
IBM115 citations96
US5015594AMay 14, 1991
Process of making BiCMOS devices having closely spaced device regions
IBM122 citations95
US4028149AJun 7, 1977
Process for forming monocrystalline silicon carbide on silicon substrates
IBM75 citations94
US5241203AAug 31, 1993
Inverse T-gate FET transistor with lightly doped source and drain region
IBM53 citations93
US5120668AJun 9, 1992
Method of forming an inverse T-gate FET transistor
IBM46 citations93
US4583106AApr 15, 1986
Fabrication methods for high performance lateral bipolar transistors
IBM39 citations92
US4546536AOct 15, 1985
Fabrication methods for high performance lateral bipolar transistors
IBM42 citations92
US4492008AJan 8, 1985
Methods for making high performance lateral bipolar transistors
IBM31 citations92
US4392149AJul 5, 1983
Bipolar transistor
IBM41 citations92
US4309812AJan 12, 1982
Process for fabricating improved bipolar transistor utilizing selective etching
IBM33 citations92
US4442589AApr 17, 1984
Method for manufacturing field effect transistors
IBM35 citations91
US5340775AAug 23, 1994
Structure and fabrication of SiCr microfuses
IBM40 citations89
US4728624AMar 1, 1988
Selective epitaxial growth structure and isolation
IBM14 citations82
US4510676AApr 16, 1985
Method of fabricating a lateral PNP transistor
IBM26 citations80
US5285099AFeb 8, 1994
SiCr microfuses
IBM17 citations79
US4908691AMar 13, 1990
Selective epitaxial growth structure and isolation
IBM5 citations74
US4403394ASep 13, 1983
Formation of bit lines for ram device
IBM20 citations74
US3998674ADec 21, 1976
Method for forming recessed regions of thermally oxidized silicon and structures thereof utilizing anisotropic etching
IBM8 citations66
US4960717AOct 2, 1990
Fabrication of dielectrically isolated integrated circuit devices
IBM2 citations63