Inventor

SEMENAS EDWARD

US10 patents

⚠️ This page may combine multiple inventors who share the name “SEMENAS EDWARD”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

II VI INC

3 patents

US7608524B2Oct 27, 2009

Method of and system for forming SiC crystals having spatially uniform doping impurities

II VI INC22 citations91

US7767022B1Aug 3, 2010

Method of annealing a sublimation grown crystal

II VI INC53 citations90

US7547360B2Jun 16, 2009

Reduction of carbon inclusions in sublimation grown SiC single crystals

II VI INC3 citations62

GUPTA AVINASH K

2 patents

US8216369B2Jul 10, 2012

System for forming SiC crystals having spatially uniform doping impurities

GUPTA AVINASH K18 citations90

US10294584B2May 21, 2019

SiC single crystal sublimation growth method and apparatus

GUPTA AVINASH K13 citations76

II VI DELAWARE INC

2 patents

US11761117B2Sep 19, 2023

SiC single crystal sublimation growth apparatus

II VI DELAWARE INC0 citations60

US11149359B2Oct 19, 2021

SiC single crystal sublimation growth apparatus

II VI DELAWARE INC0 citations60

ZWIEBACK ILYA

1 patent

US8313720B2Nov 20, 2012

Guided diameter SiC sublimation growth with multi-layer growth guide

ZWIEBACK ILYA5 citations61

WU PING

1 patent

US8449671B2May 28, 2013

Fabrication of SiC substrates with low warp and bow

WU PING3 citations58

GUPTA AVINASH

1 patent

US8871025B2Oct 28, 2014

SiC single crystals with reduced dislocation density grown by step-wise periodic perturbation technique

GUPTA AVINASH2 citations57