Inventor

CZUBATYJ WOLODYMYR

US55 patents

⚠️ This page may combine multiple inventors who share the name “CZUBATYJ WOLODYMYR”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

CZUBATYJ WOLODYMYR

OVONYX INC

Electrically programmable memory element with improved contacts

Programmable resistance memory element with layered memory material

Reduction of drift in phase-change memory via thermally-managed programming

Methods of accelerated life testing of programmable resistance memory elements

Programmable resistance memory element with threshold switching material

Method of eliminating drift in phase-change memory

Reading phase change memories without triggering reset cell threshold devices

Memory device

Electrically programmable memory element with improved contacts

Temperature and pressure control methods to fill features with programmable resistance and switching devices

Phase change device with offset contact

Phase change device with offset contact

Composite chalcogenide materials and devices

Phase change memory that switches between crystalline phases

Memory device and method of making same

Memory device and method of making same

Chalcogenide devices and materials having reduced germanium or telluruim content

Memory element with improved contacts

Programmable resistance memory element with threshold switching material

Multilevel variable resistance memory cell utilizing crystalline programming states

Breakdown layer via lateral diffusion

ENERGY CONVERSION DEVICES INC

Method of programming phase-change memory element

Memory element with energy control mechanism

Composite memory material comprising a mixture of phase-change memory material and dielectric material

Electrically erasable, directly overwritable, multibit single cell memory elements and arrays fabricated therefrom

Electrically erasable memory elements having improved set resistance stability

Electrically erasable, directly overwritable, multibit single cell memory elements and arrays fabricated therefrom

Electrically erasable memory elements having reduced switching current requirements and increased write/erase cycle life

Electrically erasable phase change memory

Photovoltaic device having incident radiation directing means for total internal reflection

Memory element with memory material comprising phase-change material and dielectric material

Homogeneous compositions of microcrystalline semiconductor material, semiconductor devices and directly overwritable memory elements fabricated therefrom, and arrays fabricated from the memory elements

Electrically erasable, directly overwritable, multibit single cell memory elements and arrays fabricated therefrom

Electronic arrays having thin film line drivers

Method of making a double injection field effect transistor

Method of forming a layer of doped crystalline semiconductor alloy material

Liquid crystal display matrix array employing ovonic threshold switching devices to isolate individual pixels

Active matrix LCD array employing thin film chalcogenide threshold switches to isolate individual pixels

Semiconductor with ordered clusters

Functional testing of ultra large area, ultra large scale integrated circuits

CZUBATYJ WOLODYMYR

Memory device

Memory device

Phase change memory that switches between crystalline phases

INTEL CORP

Forming a carbon layer between phase change layers of a phase change memory

Forming a carbon layer between phase change layers of a phase change memory

ELPIDA MEMORY INC

Electrically rewritable non-volatile memory element and method of manufacturing the same

Electrically rewritable non-volatile memory element and method of manufacturing the same

OVSHINSKY STANFORD R

Homogeneous composition of microcrystalline semiconductor material, semiconductor devices and directly overwritable memory elements fabricated therefrom, and arrays fabricated from the memory elements

ST MICROELECTRONICS SRL

Memory device

SCHELL CARL

Variable resistance materials with superior data retention characteristics