P

Inventor

KAJIMOTO TAKESHI

JP35 patents
⚠️ This page may combine multiple inventors who share the name “KAJIMOTO TAKESHI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

MITSUBISHI ELECTRIC CORP

21 patents
US5384745AJan 24, 1995

Synchronous semiconductor memory device

MITSUBISHI ELECTRIC CORP430 citations99
US5594704AJan 14, 1997

Synchronous semiconductor memory device

MITSUBISHI ELECTRIC CORP117 citations98
US5867446AFeb 2, 1999

Synchronous semiconductor memory device

MITSUBISHI ELECTRIC CORP85 citations96
US5600281AFeb 4, 1997

Oscillator circuit generating a clock signal having a temperature dependent cycle and a semiconductor memory device including the same

MITSUBISHI ELECTRIC CORP61 citations96
US5557193ASep 17, 1996

Stabilized voltage generating circuit and internal voltage down converter and a method of generating an internal operating power supply voltage for a dynamically operating circuit

MITSUBISHI ELECTRIC CORP64 citations96
US5499214AMar 12, 1996

Oscillator circuit generating a clock signal having a temperature dependent cycle and a semiconductor memory device including the same

MITSUBISHI ELECTRIC CORP81 citations96
US5442277AAug 15, 1995

Internal power supply circuit for generating internal power supply potential by lowering external power supply potential

MITSUBISHI ELECTRIC CORP56 citations96
US5391979AFeb 21, 1995

Constant current generating circuit for semiconductor devices

MITSUBISHI ELECTRIC CORP54 citations96
US5490119AFeb 6, 1996

Semiconductor device including signal generating circuit with level converting function and with reduced area of occupation

MITSUBISHI ELECTRIC CORP63 citations95
US5446418AAug 29, 1995

Ring oscillator and constant voltage generation circuit

MITSUBISHI ELECTRIC CORP105 citations95
US6151273ANov 21, 2000

Synchronous semiconductor memory device

MITSUBISHI ELECTRIC CORP30 citations93
US5659260AAug 19, 1997

Sense amplifier having a circuit for compensating for potential voltage drops caused by parasitic interconnections

MITSUBISHI ELECTRIC CORP31 citations93
US5530640AJun 25, 1996

IC substrate and boosted voltage generation circuits

MITSUBISHI ELECTRIC CORP42 citations92
US5436552AJul 25, 1995

Clamping circuit for clamping a reference voltage at a predetermined level

MITSUBISHI ELECTRIC CORP52 citations92
US5381367AJan 10, 1995

Semiconductor memory device and an operating method of the same

MITSUBISHI ELECTRIC CORP23 citations92
US6456563B1Sep 24, 2002

Semiconductor memory device that operates in sychronization with a clock signal

MITSUBISHI ELECTRIC CORP17 citations84
US5539353AJul 23, 1996

Circuit for compensating for potential voltage drops caused by parasitic interconnection resistance

MITSUBISHI ELECTRIC CORP7 citations74
US5412604AMay 2, 1995

Semiconductor device using boosted signal

MITSUBISHI ELECTRIC CORP16 citations74
US5530397AJun 25, 1996

Reference voltage generating circuit of semiconductor memory device

MITSUBISHI ELECTRIC CORP17 citations73
US5357416AOct 18, 1994

Voltage generating circuit causing no threshold voltage loss by FET in output voltage

MITSUBISHI ELECTRIC CORP18 citations67
US6621329B2Sep 16, 2003

Semiconductor device

MITSUBISHI ELECTRIC CORP5 citations63

HITACHI LTD

6 patents

RENESAS TECH CORP

4 patents

KUBOTA KK

2 patents

KUBOTA LTD

1 patent

RENESAS ELECTRONICS CORP

1 patent