Inventor
OGIRIMA MASAHIKO
JP7 patents
Patents
7 patentsUS4276114AJun 30, 1981
Semiconductor substrate and a manufacturing method thereof
HITACHI LTD54 citations94
US4458410AJul 10, 1984
Method of forming electrode of semiconductor device
HITACHI LTD37 citations89
US4819055AApr 4, 1989
Semiconductor device having a PN junction formed on an insulator film
HITACHI LTD8 citations73
US4860086AAug 22, 1989
Semiconductor device
HITACHI LTD9 citations72
US4000716AJan 4, 1977
Epitaxial growth device
HITACHI LTD17 citations68
US4007074AFeb 8, 1977
Method of making an epitaxial growth layer of GaAs1-x Px compound semiconductor
HITACHI LTD13 citations67
US4373975AFeb 15, 1983
Method of diffusing an impurity
HITACHI LTD0 citations49