Inventor
MOUSTAKAS THEODORE D
US39 patents
⚠️ This page may combine multiple inventors who share the name “MOUSTAKAS THEODORE D”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
UNIV BOSTON
23 patentsUS5686738ANov 11, 1997
Highly insulating monocrystalline gallium nitride thin films
UNIV BOSTON151 citations99
US5633192AMay 27, 1997
Method for epitaxially growing gallium nitride layers
UNIV BOSTON138 citations98
US5847397ADec 8, 1998
Photodetectors using III-V nitrides
UNIV BOSTON82 citations96
US5725674AMar 10, 1998
Device and method for epitaxially growing gallium nitride layers
UNIV BOSTON44 citations96
US5385862AJan 31, 1995
Method for the preparation and doping of highly insulating monocrystalline gallium nitride thin films
UNIV BOSTON81 citations96
US9318652B1Apr 19, 2016
Ultraviolet light emitting diode structures and methods of manufacturing the same
UNIV BOSTON24 citations94
US8723189B1May 13, 2014
Ultraviolet light emitting diode structures and methods of manufacturing the same
UNIV BOSTON16 citations92
US6123768ASep 26, 2000
Method for the preparation and doping of highly insulating monocrystalline gallium nitride thin films
UNIV BOSTON27 citations92
US5296119AMar 22, 1994
Defect-induced control of the structure of boron nitride
UNIV BOSTON20 citations92
US8035113B2Oct 11, 2011
Optical devices featuring textured semiconductor layers
UNIV BOSTON24 citations91
US5677538AOct 14, 1997
Photodetectors using III-V nitrides
UNIV BOSTON84 citations91
US10535801B2Jan 14, 2020
High efficiency ultraviolet light emitting diode with band structure potential fluctuations
UNIV BOSTON5 citations84
US9627580B2Apr 18, 2017
High efficiency ultraviolet light emitting diode with band structure potential fluctuations
UNIV BOSTON6 citations84
US8987755B1Mar 24, 2015
Ultraviolet light emitting diode structures and methods of manufacturing the same
UNIV BOSTON6 citations84
US7777241B2Aug 17, 2010
Optical devices featuring textured semiconductor layers
UNIV BOSTON18 citations82
US7235819B2Jun 26, 2007
Semiconductor device having group III nitride buffer layer and growth layers
UNIV BOSTON7 citations74
US6953703B2Oct 11, 2005
Method of making a semiconductor device with exposure of sapphire substrate to activated nitrogen
UNIV BOSTON5 citations74
US10593830B1Mar 17, 2020
Ultraviolet light emitting diode structures and methods of manufacturing the same
UNIV BOSTON1 citations73
US9780254B1Oct 3, 2017
Ultraviolet light emitting diode structures and methods of manufacturing the same
UNIV BOSTON3 citations73
US7663157B2Feb 16, 2010
Semiconductor device having group III nitride buffer layer and growth layers
UNIV BOSTON2 citations63
US11646395B2May 9, 2023
High efficiency ultraviolet light emitting diode with electron tunnelling
UNIV BOSTON0 citations62
US11502220B1Nov 15, 2022
Ultraviolet light emitting diode structures and methods of manufacturing the same
UNIV BOSTON0 citations62
US10361343B2Jul 23, 2019
Ultraviolet light emitting diodes
UNIV BOSTON2 citations61
EXXON RESEARCH ENGINEERING CO
8 patentsUS4528082AJul 9, 1985
Method for sputtering a PIN amorphous silicon semi-conductor device having partially crystallized P and N-layers
EXXON RESEARCH ENGINEERING CO39 citations92
US4285762AAug 25, 1981
Plasma etching of amorphous silicon (SE-35)
EXXON RESEARCH ENGINEERING CO31 citations92
US4251289AFeb 17, 1981
Gradient doping in amorphous silicon
EXXON RESEARCH ENGINEERING CO50 citations89
US4533450AAug 6, 1985
Control of the hydrogen bonding in reactively sputtered amorphous silicon
EXXON RESEARCH ENGINEERING CO9 citations74
US4508609AApr 2, 1985
Method for sputtering a PIN microcrystalline/amorphous silicon semiconductor device with the P and N-layers sputtered from boron and phosphorous heavily doped targets
EXXON RESEARCH ENGINEERING CO19 citations73
US4407710AOct 4, 1983
Hybrid method of making an amorphous silicon P-I-N semiconductor device
EXXON RESEARCH ENGINEERING CO9 citations73
US4417092ANov 22, 1983
Sputtered pin amorphous silicon semi-conductor device and method therefor
EXXON RESEARCH ENGINEERING CO17 citations70
US4739383AApr 19, 1988
Optical detector and amplifier based on tandem semiconductor devices
EXXON RESEARCH ENGINEERING CO6 citations55
MOUSTAKAS THEODORE D
3 patentsUS8237175B2Aug 7, 2012
Optical devices featuring textured semiconductor layers
MOUSTAKAS THEODORE D9 citations81
US8592800B2Nov 26, 2013
Optical devices featuring nonpolar textured semiconductor layers
MOUSTAKAS THEODORE D17 citations78
US8257987B2Sep 4, 2012
Planarization of GaN by photoresist technique using an inductively coupled plasma
MOUSTAKAS THEODORE D3 citations60