Inventor
PARK CHUL MIN
KR27 patents
⚠️ This page may combine multiple inventors who share the name “PARK CHUL MIN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
16 patentsUS7306425B2Dec 11, 2007
Fan assembly
SAMSUNG ELECTRONICS CO LTD27 citations90
US7406020B2Jul 29, 2008
Method of writing data on a storage device using a probe technique
SAMSUNG ELECTRONICS CO LTD13 citations83
US7319224B2Jan 15, 2008
Semiconductor probe with resistive tip and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD14 citations83
US7759954B2Jul 20, 2010
Semiconductor probe having resistive tip and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD2 citations63
US7419843B2Sep 2, 2008
Method of manufacturing semiconductor probe having resistive tip
SAMSUNG ELECTRONICS CO LTD4 citations63
US7808025B2Oct 5, 2010
Electric field read/write head, method of manufacturing the same, and information storage device comprising the electric field read/write head
SAMSUNG ELECTRONICS CO LTD2 citations62
US7759153B2Jul 20, 2010
Method of fabricating electric field sensor having electric field shield
SAMSUNG ELECTRONICS CO LTD2 citations62
US7889628B2Feb 15, 2011
Ferroelectric recording medium and writing method for the same
SAMSUNG ELECTRONICS CO LTD0 citations52
US7885170B2Feb 8, 2011
Reading/writing head using electric field, data reading/writing apparatus including the same, and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations52
US7820311B2Oct 26, 2010
Ferroelectric recording medium and writing method for the same
SAMSUNG ELECTRONICS CO LTD1 citations52
US7933190B2Apr 26, 2011
Electric field read/write device and method of driving the same
SAMSUNG ELECTRONICS CO LTD0 citations51
US7733761B2Jun 8, 2010
Ferroelectric recording medium comprising anisotropic conduction layer, recording apparatus comprising the same, and recording method of the same
SAMSUNG ELECTRONICS CO LTD0 citations51
US7687838B2Mar 30, 2010
Resistive memory device having array of probes and method of manufacturing the resistive memory device
SAMSUNG ELECTRONICS CO LTD1 citations51
US7994499B2Aug 9, 2011
Semiconductor probe having wedge shape resistive tip and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations42
US7915109B2Mar 29, 2011
Semiconductor probe structure using impact-ionization metal oxide semiconductor device, information storing device therewith and manufacturing method thereof
SAMSUNG ELECTRONICS CO LTD0 citations41
US7700393B2Apr 20, 2010
Method of manufacturing enhancement type semiconductor probe and information storage device having the semiconductor probe using the same
SAMSUNG ELECTRONICS CO LTD0 citations41
HYUNDAI MOTOR CO LTD
3 patentsKO HYOUNG-SOO
2 patentsUS8107354B2Jan 31, 2012
Electric field read/write head, method of manufacturing the same, and information storage device comprising electric field read/write head
KO HYOUNG-SOO0 citations49
US8064324B2Nov 22, 2011
Electric field effect read/write head, method of manufacturing the same, and electric field effect storage apparatus having the same
KO HYOUNG-SOO0 citations49