Inventor
TSAI KWONG-JR
TW7 patents
Patents
7 patentsUS5893734AApr 13, 1999
Method for fabricating capacitor-under-bit line (CUB) dynamic random access memory (DRAM) using tungsten landing plug contacts
VANGUARD INT SEMICONDUCT CORP112 citations97
US6017614AJan 25, 2000
Plasma-enhanced chemical vapor deposited SIO2 /SI3 N4 multilayer passivation layer for semiconductor applications
VANGUARD INT SEMICONDUCT CORP70 citations95
US5851603ADec 22, 1998
Method for making a plasma-enhanced chemical vapor deposited SiO2 Si3 N4 multilayer passivation layer for semiconductor applications
VANGUARD INT SEMICONDUCT CORP59 citations95
US5962344AOct 5, 1999
Plasma treatment method for PECVD silicon nitride films for improved passivation layers on semiconductor metal interconnections
VANGUARD INT SEMICONDUCT CORP44 citations92
US6107171AAug 22, 2000
Method to manufacture metal gate of integrated circuits
VANGUARD INT SEMICONDUCT CORP30 citations91
US6277719B1Aug 21, 2001
Method for fabricating a low resistance Poly-Si/metal gate
VANGUARD INT SEMICONDUCT CORP28 citations89
US5943599AAug 24, 1999
Method of fabricating a passivation layer for integrated circuits
VANGUARD INT SEMICONDUCT CORP11 citations73