Inventor

DAINESE MATTEO

AT58 patents

⚠️ This page may combine multiple inventors who share the name “DAINESE MATTEO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

DAINESE MATTEO

INFINEON TECHNOLOGIES AG

Method for producing IGBT with dV/dt controllability

Semiconductor device with control structure including buried portions and method of manufacturing

Semiconductor device and reverse conducting insulated gate bipolar transistor with isolated source zones

Method for producing IGBT with dV/dt controllability

Semiconductor device with separation regions

Semiconductor device with transistor cells and enhancement cells with delayed control signals

Method of forming a semiconductor substrate with buried cavities and dielectric support structures

Semiconductor device with control structure including buried portions and method of manufacturing

Power semiconductor device with dV/dt controllability and cross-trench arrangement

Semiconductor device and reverse conducting insulated gate bipolar transistor with isolated source zones

Semiconductor device including a plurality of trenches

Power semiconductor device having a barrier region

Semiconductor component with edge termination region

Power semiconductor switch having a cross-trench structure

IGBT with dV/dt controllability

Power semiconductor device having a cross-trench arrangement

Semiconductor component with edge termination region

Semiconductor device with separation regions

IGBT with dV/dt controllability

Buried insulator regions and methods of formation thereof

Method of processing a power semiconductor device

Semiconductor device with transistor cells and enhancement cells with delayed control signals

Semiconductor device with buried cavities and dielectric support structures

Method of manufacturing a semiconductor device having electrode trenches, isolated source zones and separation structures

Method of manufacturing a semiconductor device having electrode trenches, isolated source zones and separation structures

Semiconductor device with semiconductor mesa including a constriction

Semiconductor device and insulated gate bipolar transistor with source zones formed in semiconductor mesas

INFINEON TECHNOLOGIES AUSTRIA AG

Method of manufacturing a reverse-blocking IGBT

Isolation structure for IGBT devices having an integrated diode

Power semiconductor device

Semiconductor device including a transistor with one or more barrier regions

Power semiconductor device having overvoltage protection and method of manufacturing the same

Semiconductor device comprising a barrier region

Power semiconductor device having overvoltage protection

Power diode and method of manufacturing a power diode

Power diode and method of manufacturing a power diode

Power diode and method of manufacturing a power diode

Insulated gate bipolar transistor

Semiconductor device having a transistor with trenches and mesas

Diode including a plurality of trenches

Semiconductor device with integrated current sensor

Method for fabricating a semiconductor device using wet etching and dry etching and semiconductor device

Method for fabricating a semiconductor device using wet etching and dry etching and semiconductor device

Reverse-conducting igbt having a reduced forward recovery voltage

Power transistor with dV/dt controllability and tapered mesas

INFINEON TECH DRESDEN GMBH & CO KG

Power semiconductor device with p-contact and doped insulation blocks defining contact holes

Power semiconductor device with reliably verifiable p-contact and method

Power semiconductor device having elevated source regions and recessed body regions

Method of forming a power semiconductor device

INFINEON TECH AUSTRIA AG

Diode including a trench electrode subdivided into at least first and second parts