Inventor
FURUTA MAMORU
JP21 patents
⚠️ This page may combine multiple inventors who share the name “FURUTA MAMORU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD
10 patentsUS5766989AJun 16, 1998
Method for forming polycrystalline thin film and method for fabricating thin-film transistor
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD283 citations98
US5591668AJan 7, 1997
Laser annealing method for a semiconductor thin film
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD233 citations98
US6034748AMar 7, 2000
Thin film transistor, manufacturing method therefor and liquid crystal display unit using the same
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD70 citations96
US5365034ANov 15, 1994
Defect detection and defect removal apparatus of thin film electronic device
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD93 citations96
US5680190AOct 21, 1997
Liquid crystal display apparatus including the same transparent material in the TFT semiconductor layer and a sub-pixel electrode
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD74 citations93
US5523865AJun 4, 1996
Liquid-crystal display top gate thin film transistor with particular connection between the drain and the display electrode
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD42 citations92
US5397718AMar 14, 1995
Method of manufacturing thin film transistor
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD47 citations92
US5351145ASep 27, 1994
Active matrix substrate device and related method
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD32 citations92
US6309917B1Oct 30, 2001
Thin film transistor manufacturing method and thin film transistor
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD21 citations90
US6420760B2Jul 16, 2002
Thin film transistor manufacturing method and thin film transistor
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD8 citations71
KOCHI IND PROMOTION CT
5 patentsUS7993964B2Aug 9, 2011
Manufacturing method of semiconductor device including active layer of zinc oxide with controlled crystal lattice spacing
KOCHI IND PROMOTION CT214 citations98
US7598520B2Oct 6, 2009
Semiconductor device including active layer of zinc oxide with controlled crystal lattice spacing and manufacturing method thereof
KOCHI IND PROMOTION CT238 citations98
US7576394B2Aug 18, 2009
Thin film transistor including low resistance conductive thin films and manufacturing method thereof
KOCHI IND PROMOTION CT231 citations98
US7981734B2Jul 19, 2011
Manufacturing method of thin film transistor including low resistance conductive thin films
KOCHI IND PROMOTION CT90 citations97
US7977169B2Jul 12, 2011
Semiconductor device including active layer made of zinc oxide with controlled orientations and manufacturing method thereof
KOCHI IND PROMOTION CT125 citations97
NGK INSULATORS LTD
5 patentsUS4387067AJun 7, 1983
Ceramic arc tube of metal vapor discharge lamps and a method of producing the same
NGK INSULATORS LTD44 citations95
US4503356AMar 5, 1985
Ceramic arc tube for metal vapor discharge lamps
NGK INSULATORS LTD37 citations91
US4451418AMay 29, 1984
Method for forming a green body of ceramic arc tubes used for a metal vapor discharge lamp and a molding die for forming said tube
NGK INSULATORS LTD30 citations91
US4579707AApr 1, 1986
Method for producing a thin-walled ceramic tube
NGK INSULATORS LTD11 citations72
US5499913AMar 19, 1996
Device for producing honeycomb structural bodies
NGK INSULATORS LTD6 citations57