Inventor · disambiguated record
Ji Eon Yoon
Also filed as: YOON JI EON
4 granted patents·1 pending application·24 citations·filing 2015–2017
70Inventor score
Files withSAMSUNG ELECTRONICS CO LTD5
Top patents by PatentIndex Score
5 records- 0195US9761719B2Semiconductor device having silicon-germanium source/drain regions with varying germanium concentrationsSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Sep 12, 2017·19 cites·20 claims
- 0281US10008600B2Semiconductor device having silicon-germanium source/drain regions with varying germanium concentrationsSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Jun 26, 2018·3 cites·17 claims
- 0374US10269962B2Semiconductor device and method for manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Apr 23, 2019·2 cites·20 claims
- 0438US10014173B2Single semiconductor crystal structure having an improved structure for crystalline lattice mismatch, semiconductor device and method of manufacturing sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Jul 3, 2018·0 cites·18 claims
- 0538US2017373062A1Semiconductor Device and Method for Fabricating the SameSAMSUNG ELECTRONICS CO LTD·Filed 2017·Application pending·0 cites
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →