P

Inventor

SEKO NOBUYA

JP26 patents
⚠️ This page may combine multiple inventors who share the name “SEKO NOBUYA”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

NEC CORP

14 patents
US6075315AJun 13, 2000

Field-emission cold cathode having improved insulating characteristic and manufacturing method of the same

NEC CORP38 citations91
US6171163B1Jan 9, 2001

Process for production of field-emission cold cathode

NEC CORP47 citations90
US7303945B2Dec 4, 2007

Method for forming pattern of stacked film and thin film transistor

NEC CORP10 citations83
US6294868B1Sep 25, 2001

Electron gun for electron tube with cold cathode

NEC CORP8 citations73
US6036565AMar 14, 2000

Method of fabricating a field emmision cold cathode

NEC CORP15 citations73
US5994833ANov 30, 1999

Field emission cold cathode apparatus having a heater for heating emitters to decrease adsorption of a gas into the emitters

NEC CORP11 citations73
US5730634AMar 24, 1998

Inspection method and inspection apparatus for field-emission cold cathode

NEC CORP14 citations73
US7781837B2Aug 24, 2010

Stacked film including a semiconductor film having a taper angle, and thin film transistor including the stacked film

NEC CORP2 citations62
US6445113B1Sep 3, 2002

Field emission cold cathode device and method of manufacturing the same

NEC CORP4 citations62
US6414421B1Jul 2, 2002

Field emission cold cathode

NEC CORP4 citations62
US6377231B2Apr 23, 2002

Image-casting control method for image display device and image display device

NEC CORP3 citations62
US5889359AMar 30, 1999

Field-emission type cold cathode with enhanced electron beam axis symmetry

NEC CORP6 citations62
US5787337AJul 28, 1998

Method of fabricating a field-emission cold cathode

NEC CORP4 citations62
US7633571B2Dec 15, 2009

Thin-film transistor with semiconductor layer and off-leak current characteristics

NEC CORP0 citations41

TIANMA JAPAN LTD

8 patents

NLT TECHNOLOGIES LTD

3 patents

SHANGHAI TIANMA MICRO ELECT CO

1 patent