Inventor
NOELSCHER CHRISTOPH
DE33 patents
⚠️ This page may combine multiple inventors who share the name “NOELSCHER CHRISTOPH”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
INFINEON TECHNOLOGIES AG
14 patentsUS6730463B2May 4, 2004
Method for determining and removing phase conflicts on alternating phase masks
INFINEON TECHNOLOGIES AG29 citations90
US7286207B2Oct 23, 2007
Exposing a semiconductor wafer using two different spectral wavelengths and adjusting for chromatic aberration
INFINEON TECHNOLOGIES AG14 citations84
US7011936B2Mar 14, 2006
Photomask and method of structuring a photoresist by double exposure with imaging auxiliary structures and different exposure tools
INFINEON TECHNOLOGIES AG13 citations82
US6680151B2Jan 20, 2004
Alternating phase mask
INFINEON TECHNOLOGIES AG14 citations82
US7207030B2Apr 17, 2007
Method for improving a simulation model of photolithographic projection
INFINEON TECHNOLOGIES AG10 citations79
US7368385B2May 6, 2008
Method for producing a structure on the surface of a substrate
INFINEON TECHNOLOGIES AG5 citations62
US7370313B2May 6, 2008
Method for optimizing a photolithographic mask
INFINEON TECHNOLOGIES AG4 citations60
US7070887B2Jul 4, 2006
Photolithographic mask
INFINEON TECHNOLOGIES AG0 citations52
US7011909B2Mar 14, 2006
Photolithography mask and method of fabricating a photolithography mask
INFINEON TECHNOLOGIES AG0 citations52
US6569772B2May 27, 2003
Method for producing an alternating phase mask
INFINEON TECHNOLOGIES AG1 citations51
US7443484B2Oct 28, 2008
Method for exposing a semiconductor wafer by applying periodic movement to a component
INFINEON TECHNOLOGIES AG1 citations49
US7491474B2Feb 17, 2009
Masks for lithographic imagings and methods for fabricating the same
INFINEON TECHNOLOGIES AG0 citations42
US7361434B2Apr 22, 2008
Phase shift mask
INFINEON TECHNOLOGIES AG0 citations42
US7297468B2Nov 20, 2007
Method for forming a structure element on a wafer by means of a mask and a trimming mask assigned hereto
INFINEON TECHNOLOGIES AG0 citations42
QIMONDA AG
9 patentsUS7825031B2Nov 2, 2010
Method of fabricating a semiconductor device
QIMONDA AG2 citations63
US7794614B2Sep 14, 2010
Methods for generating sublithographic structures
QIMONDA AG3 citations63
US7737049B2Jun 15, 2010
Method for forming a structure on a substrate and device
QIMONDA AG2 citations63
US7759242B2Jul 20, 2010
Method of fabricating an integrated circuit
QIMONDA AG4 citations62
US7867912B2Jan 11, 2011
Methods of manufacturing semiconductor structures
QIMONDA AG4 citations61
US8043794B2Oct 25, 2011
Method of double patterning, method of processing a plurality of semiconductor wafers and semiconductor device
QIMONDA AG6 citations59
US7767571B2Aug 3, 2010
Method for manufacturing a structure in a semiconductor device and a structure in a semiconductor device
QIMONDA AG2 citations55
US7535044B2May 19, 2009
Semiconductor device, method for manufacturing a semiconductor device and mask for manufacturing a semiconductor device
QIMONDA AG0 citations52
US8003538B2Aug 23, 2011
Method for producing a structure on the surface of a substrate
QIMONDA AG0 citations51
SIEMENS AG
6 patentsUS6010798AJan 4, 2000
PEM fuel cell
SIEMENS AG70 citations94
US5629103AMay 13, 1997
High-temperature fuel cell with improved solid-electrolyte/electrode interface and method of producing the interface
SIEMENS AG62 citations94
US6162556ADec 19, 2000
Method for operating a high-temperature fuel cell installation, and a high-temperature fuel cell installation
SIEMENS AG89 citations92
US6162554ADec 19, 2000
Method and system for utilizing enthalpy contained in exhaust gases of low-temperature fuel cells
SIEMENS AG29 citations89
US5397664AMar 14, 1995
Phase mask for projection lithography and method for the manufacture thereof
SIEMENS AG18 citations78
US5284724AFeb 8, 1994
Phase mask for projection lithography and method for the manufacture thereof comprising a selectively etchable phase shift layer directly on substrate
SIEMENS AG9 citations70