Inventor
KELLER WOLFGANG
FR52 patents
⚠️ This page may combine multiple inventors who share the name “KELLER WOLFGANG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SIEMENS AG
32 patentsUS6324259B1Nov 27, 2001
Scattered-ray grid, particularly for a medical X-ray device, and a method of determining the position of the absorption elements of a scattered-ray grid
SIEMENS AG23 citations93
US4108714AAug 22, 1978
Process for producing plate-shaped silicon bodies for solar cells
SIEMENS AG42 citations92
US3935062AJan 27, 1976
Nuclear power plant with a safety enclosure
SIEMENS AG51 citations90
US4538279AAug 27, 1985
Induction coil in the form of a pancake coil for crucible-free zone melting
SIEMENS AG21 citations82
US3953796AApr 27, 1976
Method and apparatus for measuring electrical conductivity
SIEMENS AG21 citations82
US4900887AFeb 13, 1990
Floating zone drawing circuitry for semiconductor rods
SIEMENS AG17 citations74
US4797525AJan 10, 1989
Induction heater for floating zone melting
SIEMENS AG7 citations74
US4579719AApr 1, 1986
Apparatus for crucible-free floating-zone melting a semiconductor rod, particularly of silicon
SIEMENS AG14 citations74
US4506132AMar 19, 1985
Induction coil in the form of a flat coil for crucible-free floating zone melting
SIEMENS AG7 citations74
US4045278AAug 30, 1977
Method and apparatus for floating melt zone of semiconductor crystal rods
SIEMENS AG7 citations74
US3994776ANov 30, 1976
Nuclear reactor installation
SIEMENS AG13 citations74
US3985947AOct 12, 1976
Device and method for crucible-free zone melting of crystallizable rods in particular semiconductor rods
SIEMENS AG11 citations74
US3954416AMay 4, 1976
Apparatus for positively doping semiconductor crystals during zone melting
SIEMENS AG10 citations74
US3939035AFeb 17, 1976
Method of producing monocrystalline semiconductor material, particularly silicon, with adjustable dislocation density
SIEMENS AG10 citations74
US4392230AJul 5, 1983
Method and apparatus for the manufacture of silicon by crucible-free zone melting
SIEMENS AG9 citations73
US3950479AApr 13, 1976
Method of producing hollow semiconductor bodies
SIEMENS AG7 citations72
US4027051AMay 31, 1977
Method of producing homogeneously doped n-type Si monocrystals and adjusting dopant concentration therein by thermal neutron radiation
SIEMENS AG16 citations70
US4020791AMay 3, 1977
Apparatus for indiffusing dopants into semiconductor material
SIEMENS AG18 citations69
US4045183AAug 30, 1977
Support device for use in a crucible-free floating zone melting apparatus
SIEMENS AG9 citations68
US4361716ANov 30, 1982
Current lead-in of the coaxial type for sealing to a container wall
SIEMENS AG2 citations63
US4331827AMay 25, 1982
Method of producing current lead-ins having coaxial construction
SIEMENS AG6 citations63
US4039283AAug 2, 1977
Apparatus for producing a controlled radial path of resistance in a semiconductor monocrystalline rod
SIEMENS AG2 citations63
US3996096ADec 7, 1976
Method for crucible-free zone melting of semiconductor crystal rods
SIEMENS AG2 citations63
US3976536AAug 24, 1976
Method for producing a controlled radial path of resistance in a semiconductor monocrystalline rod
SIEMENS AG2 citations63
US3961906AJun 8, 1976
Apparatus for crucible-free zone melting of semiconductor crystal rods including oscillation dampening material
SIEMENS AG5 citations63
US4126509ANov 21, 1978
Process for producing phosophorous-doped silicon monocrystals having a select peripheral dopant concentration along a radial cross-section of such monocrystal
SIEMENS AG6 citations62
US4436578AMar 13, 1984
Method of setting a stable melting zone in a semiconductor crystalline rod during crucible-free zone melting thereof
SIEMENS AG2 citations58
US4696716ASep 29, 1987
Apparatus for doping semiconductor rods with solid dopants
SIEMENS AG0 citations52
US3996011ADec 7, 1976
Apparatus for crucible-free zone melting of semiconductor crystal rods
SIEMENS AG1 citations52
US3988197AOct 26, 1976
Crucible-free zone melting of semiconductor crystal rods including oscillation dampening
SIEMENS AG1 citations52
US3989468ANov 2, 1976
Apparatus for crucible-free zone melting of semiconductor crystal rods
SIEMENS AG0 citations42
US4035600AJul 12, 1977
Apparatus for crucible-free zone processing of a semiconductor rod
SIEMENS AG0 citations41
EKATO RUEHR UND MISCHTECHNIK GMBH
3 patentsUS10022683B2Jul 17, 2018
Stirring device
EKATO RUEHR UND MISCHTECHNIK GMBH3 citations68
US10493411B2Dec 3, 2019
Stirring device
EKATO RUEHR UND MISCHTECHNIK GMBH4 citations67
US10252227B2Apr 9, 2019
System and method for starting up stirring machines in a sediment
EKATO RUEHR UND MISCHTECHNIK GMBH0 citations38
BAYER AG
2 patentsZEISS CARL SMT AG
2 patentsWACKER CHEMIE GMBH
2 patentsKARLSRUHE FORSCHZENT
1 patentWAGNER IND AG
1 patentKOELBLIN ROLF
1 patentBOSCH GMBH ROBERT
1 patentINFINEON TECHNOLOGIES AG
1 patentSPATZ DIERK
1 patentWAGNER J AG
1 patentDAIMLER CHRYSLER AG
1 patentELOBAU GMBH & CO KG
1 patentShowing the top 50 of 52 patents by PatentIndex Score.