P

Inventor

KELLER WOLFGANG

FR52 patents
⚠️ This page may combine multiple inventors who share the name “KELLER WOLFGANG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SIEMENS AG

32 patents
US6324259B1Nov 27, 2001

Scattered-ray grid, particularly for a medical X-ray device, and a method of determining the position of the absorption elements of a scattered-ray grid

SIEMENS AG23 citations93
US4108714AAug 22, 1978

Process for producing plate-shaped silicon bodies for solar cells

SIEMENS AG42 citations92
US3935062AJan 27, 1976

Nuclear power plant with a safety enclosure

SIEMENS AG51 citations90
US4538279AAug 27, 1985

Induction coil in the form of a pancake coil for crucible-free zone melting

SIEMENS AG21 citations82
US3953796AApr 27, 1976

Method and apparatus for measuring electrical conductivity

SIEMENS AG21 citations82
US4900887AFeb 13, 1990

Floating zone drawing circuitry for semiconductor rods

SIEMENS AG17 citations74
US4797525AJan 10, 1989

Induction heater for floating zone melting

SIEMENS AG7 citations74
US4579719AApr 1, 1986

Apparatus for crucible-free floating-zone melting a semiconductor rod, particularly of silicon

SIEMENS AG14 citations74
US4506132AMar 19, 1985

Induction coil in the form of a flat coil for crucible-free floating zone melting

SIEMENS AG7 citations74
US4045278AAug 30, 1977

Method and apparatus for floating melt zone of semiconductor crystal rods

SIEMENS AG7 citations74
US3994776ANov 30, 1976

Nuclear reactor installation

SIEMENS AG13 citations74
US3985947AOct 12, 1976

Device and method for crucible-free zone melting of crystallizable rods in particular semiconductor rods

SIEMENS AG11 citations74
US3954416AMay 4, 1976

Apparatus for positively doping semiconductor crystals during zone melting

SIEMENS AG10 citations74
US3939035AFeb 17, 1976

Method of producing monocrystalline semiconductor material, particularly silicon, with adjustable dislocation density

SIEMENS AG10 citations74
US4392230AJul 5, 1983

Method and apparatus for the manufacture of silicon by crucible-free zone melting

SIEMENS AG9 citations73
US3950479AApr 13, 1976

Method of producing hollow semiconductor bodies

SIEMENS AG7 citations72
US4027051AMay 31, 1977

Method of producing homogeneously doped n-type Si monocrystals and adjusting dopant concentration therein by thermal neutron radiation

SIEMENS AG16 citations70
US4020791AMay 3, 1977

Apparatus for indiffusing dopants into semiconductor material

SIEMENS AG18 citations69
US4045183AAug 30, 1977

Support device for use in a crucible-free floating zone melting apparatus

SIEMENS AG9 citations68
US4361716ANov 30, 1982

Current lead-in of the coaxial type for sealing to a container wall

SIEMENS AG2 citations63
US4331827AMay 25, 1982

Method of producing current lead-ins having coaxial construction

SIEMENS AG6 citations63
US4039283AAug 2, 1977

Apparatus for producing a controlled radial path of resistance in a semiconductor monocrystalline rod

SIEMENS AG2 citations63
US3996096ADec 7, 1976

Method for crucible-free zone melting of semiconductor crystal rods

SIEMENS AG2 citations63
US3976536AAug 24, 1976

Method for producing a controlled radial path of resistance in a semiconductor monocrystalline rod

SIEMENS AG2 citations63
US3961906AJun 8, 1976

Apparatus for crucible-free zone melting of semiconductor crystal rods including oscillation dampening material

SIEMENS AG5 citations63
US4126509ANov 21, 1978

Process for producing phosophorous-doped silicon monocrystals having a select peripheral dopant concentration along a radial cross-section of such monocrystal

SIEMENS AG6 citations62
US4436578AMar 13, 1984

Method of setting a stable melting zone in a semiconductor crystalline rod during crucible-free zone melting thereof

SIEMENS AG2 citations58
US4696716ASep 29, 1987

Apparatus for doping semiconductor rods with solid dopants

SIEMENS AG0 citations52
US3996011ADec 7, 1976

Apparatus for crucible-free zone melting of semiconductor crystal rods

SIEMENS AG1 citations52
US3988197AOct 26, 1976

Crucible-free zone melting of semiconductor crystal rods including oscillation dampening

SIEMENS AG1 citations52
US3989468ANov 2, 1976

Apparatus for crucible-free zone melting of semiconductor crystal rods

SIEMENS AG0 citations42
US4035600AJul 12, 1977

Apparatus for crucible-free zone processing of a semiconductor rod

SIEMENS AG0 citations41

EKATO RUEHR UND MISCHTECHNIK GMBH

3 patents

BAYER AG

2 patents

ZEISS CARL SMT AG

2 patents

WACKER CHEMIE GMBH

2 patents

KARLSRUHE FORSCHZENT

1 patent

WAGNER IND AG

1 patent

KOELBLIN ROLF

1 patent

BOSCH GMBH ROBERT

1 patent

INFINEON TECHNOLOGIES AG

1 patent

SPATZ DIERK

1 patent

WAGNER J AG

1 patent

DAIMLER CHRYSLER AG

1 patent

ELOBAU GMBH & CO KG

1 patent

Showing the top 50 of 52 patents by PatentIndex Score.