Inventor

CHEN YING-HO

TW76 patents

⚠️ This page may combine multiple inventors who share the name “CHEN YING-HO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

CHEN YING-HO

TAIWAN SEMICONDUCTOR MFG

Shallow trench isolation (STI) method employing gap filling silicon oxide dielectric layer

Two-stage Cu anneal to improve Cu damascene process

Method of photo alignment for shallow trench isolation chemical-mechanical polishing

Self-aligned polish stop layer hard masking method for forming planarized aperture fill layers

Shallow trench isolation method employing self-aligned and planarized trench fill dielectric layer

Multilayer interface in copper CMP for low K dielectric

Slurry dispenser having multiple adjustable nozzles

Method to prevent copper CMP dishing

Readable alignment mark structure formed using enhanced chemical mechanical polishing

Trench filling method employing silicon liner layer and gap filling silicon oxide trench fill layer

Trench filling method employing oxygen densified gap filling silicon oxide layer formed with low ozone concentration

Shallow trench isolation method

Method of fabricating a readable alignment mark structure using enhanced chemical mechanical polishing

Self-aligned sacrificial oxide for shallow trench isolation

Gap-filling of O3 -TEOS for shallow trench isolation

Eliminate broken line damage of copper after CMP

Hillock inhibiting method for forming a passivated copper containing conductor layer

Elimination of electrochemical deposition copper line damage for damascene processing

Method to improve metal line adhesion by trench corner shape modification

Thermal oxidizing method for forming with attenuated surface sensitivity ozone-teos silicon oxide dielectric layer upon a thermally oxidized silicon substrate layer

Gap filling of shallow trench isolation by ozone-tetraethoxysilane

Method for forming a self-aligned copper structure with improved planarity

Trench filling method employing oxygen densified gap filling CVD silicon oxide layer

Reduction of Cu line damage by two-step CMP

Apparatus and method for chemical mechanical polishing metal on a semiconductor wafer

Method for forming gap filling silicon oxide intermetal dielectric (IMD) layer formed employing ozone-tEOS

Method and apparatus for preventing metal corrosion during chemical mechanical polishing

Post chemical mechanical polish (CMP) planarizing substrate cleaning method employing enhanced substrate hydrophilicity

Way to remove CU line damage after CU CMP

Integration of CMP and wet or dry etching for STI

Chemical mechanical polishing process with reduced defects in a copper process

Shallow trench isolation planarized by wet etchback and chemical mechanical polishing

Method to eliminate copper hillocks and to reduce copper stress

Use of low-high slurry flow to eliminate copper line damages

Polishing pad for a linear polisher and method for forming

Underlayer liner for copper damascene in low k dielectric

Elimination of copper line damages for damascene process

Method of forming shallow trench isolation by HDPCVD oxide

Mask for recovering alignment marks after chemical mechanical polishing

ROBINS CO INC A H

2-Aryl-4-substituted quinazolines

2-Phenyl-4-[cis-2,5-dimethyl-4-(2-pyridinyl)-1-piperazinyl]quinazoline

1-aryloxy-4-amino-2-butanols

1-Aryloxy-4-amino-2-butanols

1-Aryloxy-4-amino-2-butanols and the pharmaceutical use thereof

TAIWAN SEMICONDUCTOR MFG CO LTD

Replacement gate process for semiconductor devices

Replacement gate process for semiconductor devices

Replacement gate process for semiconductor devices

Replacement gate process for semiconductor devices

TAIWAN SEMICONDUCTOR MANUFACTO

Damascene process to eliminate copper defects during chemical-mechanical polishing (CMP) for making electrical interconnections on integrated circuits

TAIWAN SEMICONDUCTOR MAUFACTUR

Integrated high density plasma chemical vapor deposition (HDP-CVD) method and chemical mechanical polish (CMP) planarizing method for forming patterned planarized aperture fill layers