Inventor

NOH EUN-SUN

KR3 patents

⚠️ This page may combine multiple inventors who share the name “NOH EUN-SUN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

2 patents

US10892400B2Jan 12, 2021

Magnetic memory device

SAMSUNG ELECTRONICS CO LTD4 citations70

US10847713B2Nov 24, 2020

Cryogenic oxidation of metal layer of magnetic-tunnel-junction (MTJ) device

SAMSUNG ELECTRONICS CO LTD0 citations49

NOH EUN-SUN

1 patent

US9306156B2Apr 5, 2016

Methods of manufacturing a magnetoresistive random access memory device

NOH EUN-SUN8 citations75