Inventor
SANO MICHIHIRO
JP28 patents
⚠️ This page may combine multiple inventors who share the name “SANO MICHIHIRO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
STANLEY ELECTRIC CO LTD
22 patentsUS6673478B2Jan 6, 2004
Crystal-growth substrate and a ZnO-containing compound semiconductor device
STANLEY ELECTRIC CO LTD46 citations92
US6664565B1Dec 16, 2003
ZnO crystal growth method, ZnO crystal structure, and semiconductor device using ZnO crystal
STANLEY ELECTRIC CO LTD42 citations92
US6635903B2Oct 21, 2003
White light emission diode
STANLEY ELECTRIC CO LTD34 citations92
US6407405B1Jun 18, 2002
p-Type group II-VI compound semiconductor crystals growth method for such crystals, and semiconductor device made of such crystals
STANLEY ELECTRIC CO LTD30 citations92
US7858436B2Dec 28, 2010
Semiconductor device, its manufacture method and template substrate
STANLEY ELECTRIC CO LTD5 citations74
US7829207B2Nov 9, 2010
Manufacture method for ZnO based compound semiconductor crystal and ZnO based compound semiconductor substrate
STANLEY ELECTRIC CO LTD5 citations73
US5707900AJan 13, 1998
Method of heat-treating semiconductor crystal of a group II-group VI compound
STANLEY ELECTRIC CO LTD14 citations72
US7834371B2Nov 16, 2010
Reflective type semiconductor light emitting device
STANLEY ELECTRIC CO LTD3 citations63
US7288208B2Oct 30, 2007
Method of manufacturing ZnO substrate from ZnO crystal formed by hydrothermal synthesis method
STANLEY ELECTRIC CO LTD2 citations63
US7482618B2Jan 27, 2009
ZnO group epitaxial semiconductor device and its manufacture
STANLEY ELECTRIC CO LTD4 citations62
US5174854ADec 29, 1992
Crystal growth of group II-VI compound semiconductor
STANLEY ELECTRIC CO LTD6 citations62
US8043879B2Oct 25, 2011
Semiconductor light emitting device manufacture method
STANLEY ELECTRIC CO LTD1 citations52
US9947826B2Apr 17, 2018
ZnO-containing semiconductor structure and manufacturing thereof
STANLEY ELECTRIC CO LTD0 citations51
US8039867B2Oct 18, 2011
ZnO-containing semiconductor layer, its manufacture method, and semiconductor light emitting device
STANLEY ELECTRIC CO LTD1 citations51
US7968905B2Jun 28, 2011
ZnO-containing semiconductor layer and ZnO-containing semiconductor light emitting device
STANLEY ELECTRIC CO LTD0 citations51
US7728347B2Jun 1, 2010
ZnO layer and semiconductor light emitting device
STANLEY ELECTRIC CO LTD0 citations51
US7718468B2May 18, 2010
Manufacture method for ZnO-containing compound semiconductor layer
STANLEY ELECTRIC CO LTD0 citations51
US9496350B2Nov 15, 2016
P-type ZnO based compound semiconductor layer, a ZnO based compound semiconductor element, and an N-type ZnO based compound semiconductor laminate structure
STANLEY ELECTRIC CO LTD0 citations49
US9064790B2Jun 23, 2015
Method for producing p-type ZnO based compound semiconductor layer, method for producing ZnO based compound semiconductor element, p-type ZnO based compound semiconductor single crystal layer, ZnO based compound semiconductor element, and n-type ZnO based compound semiconductor laminate structure
STANLEY ELECTRIC CO LTD0 citations49
US9064791B2Jun 23, 2015
Method for producing p-type ZnO based compound semiconductor layer, method for producing ZnO based compound semiconductor element, and an n-type ZnO based compound semiconductor laminate structure
STANLEY ELECTRIC CO LTD0 citations49
US7968363B2Jun 28, 2011
Manufacture method for ZnO based semiconductor crystal and light emitting device using same
STANLEY ELECTRIC CO LTD0 citations42
US7943927B2May 17, 2011
ZnO based semiconductor light emitting device and its manufacture method
STANLEY ELECTRIC CO LTD0 citations41