Inventor
CHEVALLIER CHRISTOPHE J
US222 patents
⚠️ This page may combine multiple inventors who share the name “CHEVALLIER CHRISTOPHE J”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
UNITY SEMICONDUCTOR CORP
26 patentsUS7719876B2May 18, 2010
Preservation circuit and methods to maintain values representing data in one or more layers of memory
UNITY SEMICONDUCTOR CORP239 citations99
US6970375B2Nov 29, 2005
Providing a reference voltage to a cross point memory array
UNITY SEMICONDUCTOR CORP108 citations99
US6859382B2Feb 22, 2005
Memory array of a non-volatile ram
UNITY SEMICONDUCTOR CORP133 citations99
US6856536B2Feb 15, 2005
Non-volatile memory with a single transistor and resistive memory element
UNITY SEMICONDUCTOR CORP170 citations99
US6836421B2Dec 28, 2004
Line drivers that fit within a specified line pitch
UNITY SEMICONDUCTOR CORP149 citations99
US6834008B2Dec 21, 2004
Cross point memory array using multiple modes of operation
UNITY SEMICONDUCTOR CORP161 citations99
US6753561B1Jun 22, 2004
Cross point memory array using multiple thin films
UNITY SEMICONDUCTOR CORP425 citations99
US7898841B2Mar 1, 2011
Preservation circuit and methods to maintain values representing data in one or more layers of memory
UNITY SEMICONDUCTOR CORP49 citations98
US7884349B2Feb 8, 2011
Selection device for re-writable memory
UNITY SEMICONDUCTOR CORP76 citations98
US7701791B2Apr 20, 2010
Low read current architecture for memory
UNITY SEMICONDUCTOR CORP73 citations98
US7079442B2Jul 18, 2006
Layout of driver sets in a cross point memory array
UNITY SEMICONDUCTOR CORP71 citations98
US7075817B2Jul 11, 2006
Two terminal memory array having reference cells
UNITY SEMICONDUCTOR CORP66 citations98
US7071008B2Jul 4, 2006
Multi-resistive state material that uses dopants
UNITY SEMICONDUCTOR CORP69 citations98
US7057914B2Jun 6, 2006
Cross point memory array with fast access time
UNITY SEMICONDUCTOR CORP72 citations98
US7038935B2May 2, 2006
2-terminal trapped charge memory device with voltage switchable multi-level resistance
UNITY SEMICONDUCTOR CORP85 citations98
US7009909B2Mar 7, 2006
Line drivers that use minimal metal layers
UNITY SEMICONDUCTOR CORP78 citations98
US6940744B2Sep 6, 2005
Adaptive programming technique for a re-writable conductive memory device
UNITY SEMICONDUCTOR CORP100 citations98
US6870755B2Mar 22, 2005
Re-writable memory with non-linear memory element
UNITY SEMICONDUCTOR CORP137 citations98
US6850429B2Feb 1, 2005
Cross point memory array with memory plugs exhibiting a characteristic hysteresis
UNITY SEMICONDUCTOR CORP73 citations98
US6850455B2Feb 1, 2005
Multiplexor having a reference voltage on unselected lines
UNITY SEMICONDUCTOR CORP106 citations98
US6831854B2Dec 14, 2004
Cross point memory array using distinct voltages
UNITY SEMICONDUCTOR CORP72 citations98
US8363443B2Jan 29, 2013
Circuits and techniques to compensate data signals for variations of parameters affecting memory cells in cross-point arrays
UNITY SEMICONDUCTOR CORP28 citations96
US7633790B2Dec 15, 2009
Multi-resistive state memory device with conductive oxide electrodes
UNITY SEMICONDUCTOR CORP23 citations96
US6972985B2Dec 6, 2005
Memory element having islands
UNITY SEMICONDUCTOR CORP55 citations96
US6906939B2Jun 14, 2005
Re-writable memory with multiple memory layers
UNITY SEMICONDUCTOR CORP56 citations96
US6798685B2Sep 28, 2004
Multi-output multiplexor
UNITY SEMICONDUCTOR CORP60 citations96
MICRON TECHNOLOGY INC
20 patentsUS6879340B1Apr 12, 2005
CMOS imager with integrated non-volatile memory
MICRON TECHNOLOGY INC150 citations99
US6507885B2Jan 14, 2003
Memory system, method and predecoding circuit operable in different modes for selectively accessing multiple blocks of memory cells for simultaneous writing or erasure
MICRON TECHNOLOGY INC85 citations99
US6504891B1Jan 7, 2003
Timer circuit with programmable decode circuitry
MICRON TECHNOLOGY INC106 citations99
US6363454B1Mar 26, 2002
Memory system having flexible architecture and method
MICRON TECHNOLOGY INC130 citations99
US6278632B1Aug 21, 2001
Method and circuitry for performing analog over-program and under-program detection for a multistate memory cell
MICRON TECHNOLOGY INC117 citations99
US6160755ADec 12, 2000
Clock signal from an adjustable oscillator for an integrated circuit
MICRON TECHNOLOGY INC146 citations99
US6073204AJun 6, 2000
Memory system having flexible architecture and method
MICRON TECHNOLOGY INC136 citations99
US6047352AApr 4, 2000
Memory system, method and predecoding circuit operable in different modes for selectively accessing multiple blocks of memory cells for simultaneous writing or erasure
MICRON TECHNOLOGY INC169 citations99
US6002627ADec 14, 1999
Integrated circuit with temperature detector
MICRON TECHNOLOGY INC157 citations99
US5956289ASep 21, 1999
Clock signal from an adjustable oscillator for an integrated circuit
MICRON TECHNOLOGY INC162 citations99
US5875142AFeb 23, 1999
Integrated circuit with temperature detector
MICRON TECHNOLOGY INC216 citations99
US5818289AOct 6, 1998
Clocking scheme and charge transfer switch for increasing the efficiency of a charge pump or other circuit
MICRON TECHNOLOGY INC129 citations99
US5801985ASep 1, 1998
Memory system having programmable control parameters
MICRON TECHNOLOGY INC286 citations99
US6853598B2Feb 8, 2005
Non-volatile memory with test rows for disturb detection
MICRON TECHNOLOGY INC77 citations98
US6577532B1Jun 10, 2003
Method for performing analog over-program and under-program detection for a multistate memory cell
MICRON TECHNOLOGY INC86 citations98
US6108241AAug 22, 2000
Leakage detection in flash memory cell
MICRON TECHNOLOGY INC88 citations98
US8384814B2Feb 26, 2013
CMOS imager with integrated circuitry
MICRON TECHNOLOGY INC32 citations96
US7130239B2Oct 31, 2006
Memory system, method and predecoding circuit operable in different modes for selectively accessing multiple blocks of memory cells for simultaneous writing or erasure
MICRON TECHNOLOGY INC25 citations96
US7057935B2Jun 6, 2006
Erase verify for non-volatile memory
MICRON TECHNOLOGY INC32 citations96
US6961805B2Nov 1, 2005
Memory system, method and predecoding circuit operable in different modes for selectively accessing multiple blocks of memory cells for simultaneous reading writing or erasure
MICRON TECHNOLOGY INC53 citations96
MICRON QUANTUM DEVICES INC
3 patentsUS5771346AJun 23, 1998
Apparatus and method for detecting over-programming condition in multistate memory device
MICRON QUANTUM DEVICES INC127 citations99
US5581206ADec 3, 1996
Power level detection circuit
MICRON QUANTUM DEVICES INC154 citations99
US5768287AJun 16, 1998
Apparatus and method for programming multistate memory device
MICRON QUANTUM DEVICES INC98 citations98
CHEVALLIER CHRISTOPHE J
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