P

Inventor

CHEVALLIER CHRISTOPHE J

US222 patents
⚠️ This page may combine multiple inventors who share the name “CHEVALLIER CHRISTOPHE J”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

UNITY SEMICONDUCTOR CORP

26 patents
US7719876B2May 18, 2010

Preservation circuit and methods to maintain values representing data in one or more layers of memory

UNITY SEMICONDUCTOR CORP239 citations99
US6970375B2Nov 29, 2005

Providing a reference voltage to a cross point memory array

UNITY SEMICONDUCTOR CORP108 citations99
US6859382B2Feb 22, 2005

Memory array of a non-volatile ram

UNITY SEMICONDUCTOR CORP133 citations99
US6856536B2Feb 15, 2005

Non-volatile memory with a single transistor and resistive memory element

UNITY SEMICONDUCTOR CORP170 citations99
US6836421B2Dec 28, 2004

Line drivers that fit within a specified line pitch

UNITY SEMICONDUCTOR CORP149 citations99
US6834008B2Dec 21, 2004

Cross point memory array using multiple modes of operation

UNITY SEMICONDUCTOR CORP161 citations99
US6753561B1Jun 22, 2004

Cross point memory array using multiple thin films

UNITY SEMICONDUCTOR CORP425 citations99
US7898841B2Mar 1, 2011

Preservation circuit and methods to maintain values representing data in one or more layers of memory

UNITY SEMICONDUCTOR CORP49 citations98
US7884349B2Feb 8, 2011

Selection device for re-writable memory

UNITY SEMICONDUCTOR CORP76 citations98
US7701791B2Apr 20, 2010

Low read current architecture for memory

UNITY SEMICONDUCTOR CORP73 citations98
US7079442B2Jul 18, 2006

Layout of driver sets in a cross point memory array

UNITY SEMICONDUCTOR CORP71 citations98
US7075817B2Jul 11, 2006

Two terminal memory array having reference cells

UNITY SEMICONDUCTOR CORP66 citations98
US7071008B2Jul 4, 2006

Multi-resistive state material that uses dopants

UNITY SEMICONDUCTOR CORP69 citations98
US7057914B2Jun 6, 2006

Cross point memory array with fast access time

UNITY SEMICONDUCTOR CORP72 citations98
US7038935B2May 2, 2006

2-terminal trapped charge memory device with voltage switchable multi-level resistance

UNITY SEMICONDUCTOR CORP85 citations98
US7009909B2Mar 7, 2006

Line drivers that use minimal metal layers

UNITY SEMICONDUCTOR CORP78 citations98
US6940744B2Sep 6, 2005

Adaptive programming technique for a re-writable conductive memory device

UNITY SEMICONDUCTOR CORP100 citations98
US6870755B2Mar 22, 2005

Re-writable memory with non-linear memory element

UNITY SEMICONDUCTOR CORP137 citations98
US6850429B2Feb 1, 2005

Cross point memory array with memory plugs exhibiting a characteristic hysteresis

UNITY SEMICONDUCTOR CORP73 citations98
US6850455B2Feb 1, 2005

Multiplexor having a reference voltage on unselected lines

UNITY SEMICONDUCTOR CORP106 citations98
US6831854B2Dec 14, 2004

Cross point memory array using distinct voltages

UNITY SEMICONDUCTOR CORP72 citations98
US8363443B2Jan 29, 2013

Circuits and techniques to compensate data signals for variations of parameters affecting memory cells in cross-point arrays

UNITY SEMICONDUCTOR CORP28 citations96
US7633790B2Dec 15, 2009

Multi-resistive state memory device with conductive oxide electrodes

UNITY SEMICONDUCTOR CORP23 citations96
US6972985B2Dec 6, 2005

Memory element having islands

UNITY SEMICONDUCTOR CORP55 citations96
US6906939B2Jun 14, 2005

Re-writable memory with multiple memory layers

UNITY SEMICONDUCTOR CORP56 citations96
US6798685B2Sep 28, 2004

Multi-output multiplexor

UNITY SEMICONDUCTOR CORP60 citations96

MICRON TECHNOLOGY INC

20 patents
US6879340B1Apr 12, 2005

CMOS imager with integrated non-volatile memory

MICRON TECHNOLOGY INC150 citations99
US6507885B2Jan 14, 2003

Memory system, method and predecoding circuit operable in different modes for selectively accessing multiple blocks of memory cells for simultaneous writing or erasure

MICRON TECHNOLOGY INC85 citations99
US6504891B1Jan 7, 2003

Timer circuit with programmable decode circuitry

MICRON TECHNOLOGY INC106 citations99
US6363454B1Mar 26, 2002

Memory system having flexible architecture and method

MICRON TECHNOLOGY INC130 citations99
US6278632B1Aug 21, 2001

Method and circuitry for performing analog over-program and under-program detection for a multistate memory cell

MICRON TECHNOLOGY INC117 citations99
US6160755ADec 12, 2000

Clock signal from an adjustable oscillator for an integrated circuit

MICRON TECHNOLOGY INC146 citations99
US6073204AJun 6, 2000

Memory system having flexible architecture and method

MICRON TECHNOLOGY INC136 citations99
US6047352AApr 4, 2000

Memory system, method and predecoding circuit operable in different modes for selectively accessing multiple blocks of memory cells for simultaneous writing or erasure

MICRON TECHNOLOGY INC169 citations99
US6002627ADec 14, 1999

Integrated circuit with temperature detector

MICRON TECHNOLOGY INC157 citations99
US5956289ASep 21, 1999

Clock signal from an adjustable oscillator for an integrated circuit

MICRON TECHNOLOGY INC162 citations99
US5875142AFeb 23, 1999

Integrated circuit with temperature detector

MICRON TECHNOLOGY INC216 citations99
US5818289AOct 6, 1998

Clocking scheme and charge transfer switch for increasing the efficiency of a charge pump or other circuit

MICRON TECHNOLOGY INC129 citations99
US5801985ASep 1, 1998

Memory system having programmable control parameters

MICRON TECHNOLOGY INC286 citations99
US6853598B2Feb 8, 2005

Non-volatile memory with test rows for disturb detection

MICRON TECHNOLOGY INC77 citations98
US6577532B1Jun 10, 2003

Method for performing analog over-program and under-program detection for a multistate memory cell

MICRON TECHNOLOGY INC86 citations98
US6108241AAug 22, 2000

Leakage detection in flash memory cell

MICRON TECHNOLOGY INC88 citations98
US8384814B2Feb 26, 2013

CMOS imager with integrated circuitry

MICRON TECHNOLOGY INC32 citations96
US7130239B2Oct 31, 2006

Memory system, method and predecoding circuit operable in different modes for selectively accessing multiple blocks of memory cells for simultaneous writing or erasure

MICRON TECHNOLOGY INC25 citations96
US7057935B2Jun 6, 2006

Erase verify for non-volatile memory

MICRON TECHNOLOGY INC32 citations96
US6961805B2Nov 1, 2005

Memory system, method and predecoding circuit operable in different modes for selectively accessing multiple blocks of memory cells for simultaneous reading writing or erasure

MICRON TECHNOLOGY INC53 citations96

MICRON QUANTUM DEVICES INC

3 patents

CHEVALLIER CHRISTOPHE J

1 patent

Showing the top 50 of 222 patents by PatentIndex Score.