Inventor
BOSSLER MARK A
US5 patents
Patents
5 patentsUS6762125B1Jul 13, 2004
Modified facet etch to prevent blown gate oxide and increase etch chamber life
MICRON TECHNOLOGY INC13 citations78
US6727158B2Apr 27, 2004
Structure and method for forming a faceted opening and a layer filling therein
MICRON TECHNOLOGY INC15 citations76
US9318438B2Apr 19, 2016
Semiconductor structures comprising at least one through-substrate via filled with conductive materials
MICRON TECHNOLOGY INC4 citations71
US7262136B2Aug 28, 2007
Modified facet etch to prevent blown gate oxide and increase etch chamber life
MICRON TECHNOLOGY INC2 citations57
US9034769B2May 19, 2015
Methods of selectively removing a substrate material
MICRON TECHNOLOGY INC1 citations50