Inventor

KIM KI-NAM

KR161 patents

⚠️ This page may combine multiple inventors who share the name “KIM KI-NAM”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

KIM KI-NAM

SAMSUNG ELECTRONICS CO LTD

Method for fabricating a high-density semiconductor memory device

Methods of restoring data in flash memory devices and related flash memory device memory systems

Phase-change memory and method having restore function

Triple metal line 1T/1C ferroelectric memory device and method for fabrication thereof

Nonvolatile memory device and driving method thereof

Methods of forming self-aligned contact pads using a damascene gate process

Methods of forming trench isolation regions having conductive shields therein

Flash memory devices that utilize age-based verify voltages to increase data reliability and methods of operating same

Multi-bit flash memory device and memory cell array

Multi-bit flash memory device including memory cells storing different numbers of bits

Ferroelectric memory devices having a plate line control circuit and methods for operating the same

Ferroelectric memory device and method of forming the same

Ferroelectric memory device using via etch-stop layer and method for manufacturing the same

Ferroelectric capacitor and method for fabricating ferroelectric capacitor

Method for forming self-aligned contact

Fabricating methods including capacitors on capping layer

Intergrated circuit memory devices including capacitors on capping layer

Memory device including 3-dimensionally arranged memory cell transistors and methods of operating the same

Methods of operating magnetic random access memory device using spin injection and related devices

Ferroelectric integrated circuit devices having an oxygen penetration path

Memory device in which memory cells having complementary data are arranged

Ferroelectric memory devices having expanded plate lines

Semiconductor device having multilayer interconnection structure and manufacturing method thereof

Bit line pad and borderless contact on bit line stud with localized etch stop layer formed in an undermined region

Bit line landing pad and borderless contact on bit line stud with localized etch stop layer and manufacturing method thereof

Methods of implanting ions into different active areas to provide active areas having increased ion concentrations adjacent to isolation structures

Bit line landing pad and borderless contact on bit line stud with localized etch stop layer and manufacturing method thereof

Ferroelectric memory device having improved ferroelectric characteristics

Multilevel conductive interconnections including capacitor electrodes for integrated circuit devices

Bit line landing pad and borderless contact on bit line stud with etch stop layer and manufacturing method thereof

Methods of forming multilevel conductive interconnections including capacitor electrodes for integrated circuit devices

Ferroelectric memory devices which utilize boosted plate line voltages to improve reading reliability and methods of operating same

Ferroelectric memory device

Method for fabricating a capacitor of a semiconductor device and a capacitor made thereby

Semiconductor device

Semiconductor device and method of forming the same

Flash memory devices that utilize age-based verify voltages to increase data reliability and methods of operating same

Method of programming in a non-volatile memory device and non-volatile memory device for performing the same

NAND-type non-volatile memory devices having a stacked structure

Flash memory device capable of preventing coupling effect and program method thereof

Non-volatile memory device adapted to reduce coupling effect between storage elements and related methods

Phase change memory device and method of fabricating the same

Vertical type nanotube semiconductor device

SAMSUNG DISPLAY CO LTD

Flexible display device including touch sensor

Flexible display device including touch sensor

SAMUNG ELECTRONICS CO LTD

Ferroelectric memory devices having expanded plate lines

SAMSUNG ELECTRIC

Method for sensing data stored in a ferroelectric random access memory device

JI HO-CHUL

Optical waveguide and coupler apparatus and method of manufacturing the same

ELECTRONICS & TELECOMMUNICATIONS RES INST

Camera auxiliary device for privacy protection and privacy protection method using the same

HYUNDAI MOTOR CO LTD

Hybrid transmission for vehicle