Inventor

CHOI MUN-KYU

KR9 patents

⚠️ This page may combine multiple inventors who share the name “CHOI MUN-KYU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

8 patents

US6055200AApr 25, 2000

Variable test voltage circuits and methods for ferroelectric memory devices

SAMSUNG ELECTRONICS CO LTD59 citations94

US6961271B2Nov 1, 2005

Memory device in which memory cells having complementary data are arranged

SAMSUNG ELECTRONICS CO LTD41 citations92

US6914836B2Jul 5, 2005

Sense amplifier circuits using a single bit line input

SAMSUNG ELECTRONICS CO LTD23 citations92

US6392916B1May 21, 2002

Circuit for providing an adjustable reference voltage for long-life ferroelectric random access memory device

SAMSUNG ELECTRONICS CO LTD29 citations92

US6504748B2Jan 7, 2003

Ferroelectric random access memory device

SAMSUNG ELECTRONICS CO LTD14 citations83

US6407943B1Jun 18, 2002

Circuit for providing an adjustable reference voltage for long-life ferroelectric random access memory device

SAMSUNG ELECTRONICS CO LTD12 citations73

US6295223B1Sep 25, 2001

Ferroelectric random access memory with a memory with a stable sensing margin

SAMSUNG ELECTRONICS CO LTD9 citations73

US6967860B2Nov 22, 2005

Ferroelectric memory device and control method thereof

SAMSUNG ELECTRONICS CO LTD6 citations62

SAMSUNG ELECTRIC

1 patent

US6594174B2Jul 15, 2003

Method for sensing data stored in a ferroelectric random access memory device

SAMSUNG ELECTRIC20 citations92