Inventor
JANZEN ERIK
SE16 patents
⚠️ This page may combine multiple inventors who share the name “JANZEN ERIK”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
ABB RESEARCH LTD
13 patentsUS5851908ADec 22, 1998
Method for introduction of an impurity dopant in SiC, a semiconductor device formed by the method and a use of highly doped amorphous layer as a source for dopant diffusion into SiC
ABB RESEARCH LTD71 citations96
US5804482ASep 8, 1998
Method for producing a semiconductor device having a semiconductor layer of SiC
ABB RESEARCH LTD75 citations96
US5654208AAug 5, 1997
Method for producing a semiconductor device having a semiconductor layer of SiC comprising a masking step
ABB RESEARCH LTD62 citations96
US5704985AJan 6, 1998
Device and a method for epitaxially growing objects by CVD
ABB RESEARCH LTD93 citations95
US6039812AMar 21, 2000
Device for epitaxially growing objects and method for such a growth
ABB RESEARCH LTD67 citations93
US6096627AAug 1, 2000
Method for introduction of an impurity dopant in SiC, a semiconductor device formed by the method and a use of a highly doped amorphous layer as a source for dopant diffusion into SiC
ABB RESEARCH LTD21 citations92
US6030661AFeb 29, 2000
Device and a method for epitaxially growing objects by CVD
ABB RESEARCH LTD36 citations92
US5900648AMay 4, 1999
Semiconductor device having an insulated gate
ABB RESEARCH LTD46 citations92
US5831292ANov 3, 1998
IGBT having a vertical channel
ABB RESEARCH LTD24 citations92
US5792257AAug 11, 1998
Method for protecting the susceptor during epitaxial growth by CVD and a device for epitaxial growth by CVD
ABB RESEARCH LTD30 citations92
US5650638AJul 22, 1997
Semiconductor device having a passivation layer
ABB RESEARCH LTD19 citations92
US6048398AApr 11, 2000
Device for epitaxially growing objects
ABB RESEARCH LTD43 citations89
US5847414ADec 8, 1998
Semiconductor device having a hetero-junction between SiC and a Group 3B-nitride
ABB RESEARCH LTD16 citations72