Inventor
YAN PEI-YANG
US35 patents
Patents
35 patentsUS6197454B1Mar 6, 2001
Clean-enclosure window to protect photolithographic mask
INTEL CORP73 citations96
US5303002AApr 12, 1994
Method and apparatus for enhancing the focus latitude in lithography
INTEL CORP73 citations96
US5928817AJul 27, 1999
Method of protecting an EUV mask from damage and contamination
INTEL CORP63 citations95
US7118832B2Oct 10, 2006
Reflective mask with high inspection contrast
INTEL CORP15 citations92
US6908714B2Jun 21, 2005
Absorber layer for EUV
INTEL CORP17 citations92
US6818361B2Nov 16, 2004
Photomasking
INTEL CORP31 citations92
US6641959B2Nov 4, 2003
Absorberless phase-shifting mask for EUV
INTEL CORP38 citations92
US6610447B2Aug 26, 2003
Extreme ultraviolet mask with improved absorber
INTEL CORP31 citations92
US6562522B1May 13, 2003
Photomasking
INTEL CORP28 citations92
US6479195B1Nov 12, 2002
Mask absorber for extreme ultraviolet lithography
INTEL CORP86 citations92
US6280886B1Aug 28, 2001
Clean-enclosure window to protect photolithographic mask
INTEL CORP24 citations92
US5935737AAug 10, 1999
Method for eliminating final euv mask repairs in the reflector region
INTEL CORP34 citations92
US6720118B2Apr 13, 2004
Enhanced inspection of extreme ultraviolet mask
INTEL CORP29 citations91
US6607862B2Aug 19, 2003
Damascene extreme ultraviolet lithography alternative phase shift photomask and method of making
INTEL CORP27 citations91
US6583068B2Jun 24, 2003
Enhanced inspection of extreme ultraviolet mask
INTEL CORP23 citations91
US6905801B2Jun 14, 2005
High performance EUV mask
INTEL CORP20 citations90
US5958629ASep 28, 1999
Using thin films as etch stop in EUV mask fabrication process
INTEL CORP46 citations89
US7300724B2Nov 27, 2007
Interference multilayer capping design for multilayer reflective mask blanks
INTEL CORP15 citations84
US6756163B2Jun 29, 2004
Re-usable extreme ultraviolet lithography multilayer mask blank
INTEL CORP17 citations84
US6355381B1Mar 12, 2002
Method to fabricate extreme ultraviolet lithography masks
INTEL CORP14 citations82
US6913706B2Jul 5, 2005
Double-metal EUV mask absorber
INTEL CORP13 citations80
US7078136B2Jul 18, 2006
Thermally-generated mask pattern
INTEL CORP5 citations74
US6830851B2Dec 14, 2004
Photolithographic mask fabrication
INTEL CORP9 citations74
US6818357B2Nov 16, 2004
Photolithographic mask fabrication
INTEL CORP12 citations74
US6756158B2Jun 29, 2004
Thermal generation of mask pattern
INTEL CORP9 citations74
US6593041B2Jul 15, 2003
Damascene extreme ultraviolet lithography (EUVL) photomask and method of making
INTEL CORP11 citations74
US6630273B2Oct 7, 2003
Method to fabricate extreme ultraviolet lithography masks
INTEL CORP5 citations71
US7556894B2Jul 7, 2009
Mask with minimum reflectivity over absorber layer
INTEL CORP4 citations63
US7083881B2Aug 1, 2006
Photomasking
INTEL CORP1 citations63
US7410733B2Aug 12, 2008
Dual-layer EUV mask absorber with trenches having opposing sidewalls that are straight and parallel
INTEL CORP2 citations59
US7759022B2Jul 20, 2010
Phase shift mask structure and fabrication process
INTEL CORP0 citations52
US7534532B2May 19, 2009
Method to correct EUVL mask substrate non-flatness
INTEL CORP1 citations52
US7452637B2Nov 18, 2008
Method and apparatus for clean photomask handling
INTEL CORP0 citations52
US6998203B2Feb 14, 2006
Proximity correcting lithography mask blanks
INTEL CORP1 citations52
US6998202B2Feb 14, 2006
Multilayer reflective extreme ultraviolet lithography mask blanks
INTEL CORP1 citations52