Inventor

JANG SE-AUG

KR76 patents

⚠️ This page may combine multiple inventors who share the name “JANG SE-AUG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

JANG SE-AUG

HYNIX SEMICONDUCTOR INC

Method of manufacturing semiconductor devices with titanium aluminum nitride work function

Method of forming dual-metal gates in semiconductor device

Method of manufacturing a transistor in a semiconductor device

Semiconductor device with vertical channel transistor and method for fabricating the same

Semiconductor device having a fin transistor and method for fabricating the same

Non-volatile memory device with conductive sidewall spacer and method for fabricating the same

Method for forming a gate in a semiconductor device

MOSFET device fabrication method capable of allowing application of self-aligned contact process while maintaining metal gate to have uniform thickness

Method for forming gate electrode for a semiconductor device

Memory device and method for fabricating the same

Method for fabricating transistor with polymetal gate electrode

Method for fabricating a dual metal gate for a semiconductor device

Method for fabricating semiconductor device by using radical oxidation

Method for fabricating a semiconductor device with a FinFET

Semiconductor device and method for fabricating the same

Method of fabricating a transistor having a triple channel in a memory device

Method of forming a metal gate in a semiconductor device

Method for forming damascene metal gate

Method of fabricating a semiconductor device using a damascene metal gate

Method for fabricating semiconductor device with use of partial gate recessing process

Transistor structure of memory device and method for fabricating the same

Semiconductor device having a fin transistor

Transistor including bulb-type recess channel and method for fabricating the same

Method for manufacturing recess gate in a semiconductor device

Semiconductor device with bulb-type recessed channel and method for fabricating the same

Recessed gate electrode MOS transistor and method for fabricating the same

Method for fabricating a transistor having vertical channel

Method for manufacturing recess gate in a semiconductor device

HYUNDAI ELECTRONICS IND

Method for making field oxide of semiconductor device

Method for manufacturing a gate structure incorporating therein aluminum oxide as a gate dielectric

Method for forming aluminum oxide as a gate dielectric

Method of forming gate electrode in semiconductor device

Method of forming gate electrode in semiconductor device

Method for forming titanium polycide gate

Method of forming gate electrode with titanium polycide

Method for forming field oxide film of semiconductor device with silicon and nitrogen containing etching residue

Method for forming field oxide isolation film

Method of forming gate electrode with titanium polycide structure

Method for forming field oxide of semiconductor device using wet and dry oxidation

Method for forming element isolating film of semiconductor device

Method of forming gate electrode with titanium polycide structure

Method of forming gate electrode with polycide structure in semiconductor device

SK HYNIX INC

Method and gate structure for threshold voltage modulation in transistors

Semiconductor device and method for fabricating the same

Semiconductor device including gate structure for threshold voltage modulation in transistors and method for fabricating the same

Semiconductor device including gate structure for threshold voltage modulation in transistors and method for fabricating the same

Semiconductor device with dual work function gate stacks and method for fabricating the same

SUNG MIN-GYU

Semiconductor device with vertical channel transistor

HWANG SUN-HWAN

Method for forming buried word line in semiconductor device

HYUNDAI ELECTRONICS IND CO INC

Method for forming element isolating film of semiconductor device