Inventor
TEMMLER DIETMAR
DE23 patents
⚠️ This page may combine multiple inventors who share the name “TEMMLER DIETMAR”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
INFINEON TECHNOLOGIES AG
20 patentsUS7119384B2Oct 10, 2006
Field effect transistor and method for fabricating it
INFINEON TECHNOLOGIES AG32 citations92
US6841443B2Jan 11, 2005
Method for fabricating a deep trench capacitor for dynamic memory cells
INFINEON TECHNOLOGIES AG13 citations82
US6828192B2Dec 7, 2004
Semiconductor memory cell and method for fabricating the memory cell
INFINEON TECHNOLOGIES AG14 citations82
US6664167B2Dec 16, 2003
Memory with trench capacitor and selection transistor and method for fabricating it
INFINEON TECHNOLOGIES AG9 citations72
US6326262B1Dec 4, 2001
Method for fabricating epitaxy layer
INFINEON TECHNOLOGIES AG8 citations72
US7250336B2Jul 31, 2007
Method for fabricating a shadow mask in a trench of a microelectronic or micromechanical structure
INFINEON TECHNOLOGIES AG7 citations70
US6773983B2Aug 10, 2004
Memory cell arrangement and method for its fabrication
INFINEON TECHNOLOGIES AG6 citations63
US7410864B2Aug 12, 2008
Trench and a trench capacitor and method for forming the same
INFINEON TECHNOLOGIES AG3 citations62
US7368385B2May 6, 2008
Method for producing a structure on the surface of a substrate
INFINEON TECHNOLOGIES AG5 citations62
US7152461B2Dec 26, 2006
Method and apparatus for determination of the depth of depressions which are formed in a mount substrate
INFINEON TECHNOLOGIES AG6 citations62
US7049647B2May 23, 2006
Semiconductor memory cell with trench capacitor and selection transistor and method for fabricating it
INFINEON TECHNOLOGIES AG5 citations62
US7012289B2Mar 14, 2006
Memory cell having a thin insulation collar and memory module
INFINEON TECHNOLOGIES AG3 citations62
US6924225B2Aug 2, 2005
Method for producing an electrically conductive contact
INFINEON TECHNOLOGIES AG2 citations62
US6590249B2Jul 8, 2003
One-transistor memory cell configuration and method for its fabrication
INFINEON TECHNOLOGIES AG5 citations62
US7294902B2Nov 13, 2007
Trench isolation having a self-adjusting surface seal and method for producing one such trench isolation
INFINEON TECHNOLOGIES AG3 citations61
US7223651B2May 29, 2007
Dram memory cell with a trench capacitor and method for production thereof
INFINEON TECHNOLOGIES AG4 citations61
US7265025B2Sep 4, 2007
Method for filling trench and relief geometries in semiconductor structures
INFINEON TECHNOLOGIES AG6 citations60
US6821863B2Nov 23, 2004
Method for producing a cavity in a monocrystalline silicon substrate and a semiconductor component having a cavity in a monocrystalline silicon substrate with an epitaxial covering layer
INFINEON TECHNOLOGIES AG2 citations58
US7084029B2Aug 1, 2006
Method for fabricating a hole trench storage capacitor in a semiconductor substrate, and hole trench storage capacitor
INFINEON TECHNOLOGIES AG3 citations57
US6989311B2Jan 24, 2006
Method for fabricating a trench contact to a deep trench capacitor having a polysilicon filling
INFINEON TECHNOLOGIES AG0 citations51
QIMONDA AG
3 patentsUS7834395B2Nov 16, 2010
3-D channel field-effect transistor, memory cell and integrated circuit
QIMONDA AG6 citations59
US7535044B2May 19, 2009
Semiconductor device, method for manufacturing a semiconductor device and mask for manufacturing a semiconductor device
QIMONDA AG0 citations52
US8003538B2Aug 23, 2011
Method for producing a structure on the surface of a substrate
QIMONDA AG0 citations51