Inventor

HAN EUNGNAK

US43 patents

⚠️ This page may combine multiple inventors who share the name “HAN EUNGNAK”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

HAN EUNGNAK

INTEL CORP

Forming layers of materials over small regions by selective chemical reaction including limiting enchroachment of the layers over adjacent regions

Lined photobucket structure for back end of line (BEOL) interconnect formation

Maskless air gap to prevent via punch through

Method for creating alternate hardmask cap interconnect structure with increased overlay margin

Non-lithographically patterned directed self assembly alignment promotion layers

Contact over active gate structures with conductive trench contact taps for advanced integrated circuit structure fabrication

Self-assembled guided hole and via patterning over grating

Contact over active gate structures with conductive trench contact taps for advanced integrated circuit structure fabrication

Self-assembled guided hole and via patterning over grating

Colored gratings in microelectronic structures

Materials and layout design options for DSA on transition regions over active die

Maskless air gap to prevent via punch through

Photobucket floor colors with selective grafting

Differentiated molecular domains for selective hardmask fabrication and structures resulting therefrom

Exposure activated chemically amplified directed self-assembly (DSA) for back end of line (BEOL) pattern cutting and plugging

Lined photobucket structure for back end of line (BEOL) interconnect formation

Staggered lines for interconnect performance improvement and processes for forming such

Multifunctional molecules for selective polymer formation on conductive surfaces and structures resulting therefrom

Contact over active gate structures using directed self-assembly for advanced integrated circuit structure fabrication

Contact over active gate structures with metal oxide-caped contacts to inhibit shorting

Chemical compositions and methods of patterning microelectronic device structures

Chain scission photoresists and methods for forming chain scission photoresists

Contact over active gate structures with metal oxide-caped contacts to inhibit shorting

Chain scission resist compositions for EUV lithography applications

Triblock copolymers for self-aligning vias or contacts

Self aligned gratings for tight pitch interconnects and methods of fabrication

Self aligned gratings for tight pitch interconnects and methods of fabrication

Directed self-assembly enabled subtractive metal patterning

Gate spacing in integrated circuit structures

Directed self-assembly structures and techniques

Conductive cap-based approaches for conductive via fabrication and structures resulting therefrom

Self-aligned repeatedly stackable 3D vertical RRAM

Non-lithographically patterned directed self assembly alignment promotion layers

Interconnect structure surface modifications by passivating agents

Materials and deposition schemes using photoactive materials for interface chemical control and patterning of predefined structures

Directed self-assembly enabled patterning over metal layers using assisting features

WISCONSIN ALUMNI RES FOUND

Photopatternable imaging layers for controlling block copolymer microdomain orientation

Photopatternable imaging layers for controlling block copolymer microdomain orientation

Photopatternable imaging layers for controlling block copolymer microdomain orientation

Crosslinked random copolymer films for block copolymer domain orientation

GOPALAN PADMA

Patternable polymer block brush layers

WISCONSIN ALUMNI RES FOND

Block copolymer-based mask structures for the growth of nanopatterned polymer brushes

NYHUS PAUL A

Exposure activated chemically amplified directed self-assembly (DSA) for back end of line (BEOL) pattern cutting and plugging