Inventor
TANIGUCHI TOSHIMITSU
JP19 patents
⚠️ This page may combine multiple inventors who share the name “TANIGUCHI TOSHIMITSU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SANYO ELECTRIC CO
13 patentsUS6635925B1Oct 21, 2003
Semiconductor device and method of manufacturing the same
SANYO ELECTRIC CO24 citations91
US6717243B2Apr 6, 2004
Semiconductor device and the manufacturing method thereof
SANYO ELECTRIC CO12 citations73
US6784059B1Aug 31, 2004
Semiconductor device and method of manufacturing thereof
SANYO ELECTRIC CO11 citations72
US6683349B1Jan 27, 2004
Semiconductor device and method of manufacturing the same
SANYO ELECTRIC CO10 citations72
US6873053B2Mar 29, 2005
Semiconductor device with smoothed pad portion
SANYO ELECTRIC CO9 citations71
US6674114B2Jan 6, 2004
Semiconductor device and manufacturing method thereof
SANYO ELECTRIC CO2 citations62
US7372164B2May 13, 2008
Semiconductor device with parallel interconnects
SANYO ELECTRIC CO2 citations60
US7022575B2Apr 4, 2006
Manufacturing method of semiconductor device
SANYO ELECTRIC CO2 citations60
US6924534B2Aug 2, 2005
Semiconductor device having MOS transistors and bipolar transistors on a single semiconductor substrate
SANYO ELECTRIC CO4 citations59
US6861372B2Mar 1, 2005
Semiconductor device manufacturing method
SANYO ELECTRIC CO6 citations56
US7224023B2May 29, 2007
Semiconductor device and method of manufacturing thereof
SANYO ELECTRIC CO0 citations51
US7109538B2Sep 19, 2006
Nonvolatile semiconductor memory device
SANYO ELECTRIC CO0 citations48
US7045866B2May 16, 2006
Nonvolatile semiconductor memory device
SANYO ELECTRIC CO0 citations41
SEMICONDUCTOR COMPONENTS IND LLC
6 patentsUS11158734B2Oct 26, 2021
Transistor device having a source region segments and body region segments
SEMICONDUCTOR COMPONENTS IND LLC1 citations73
US12446257B2Oct 14, 2025
Method for forming transistor devices having source region segments and body region segments
SEMICONDUCTOR COMPONENTS IND LLC0 citations62
US11996477B2May 28, 2024
Transistor device having a source region segments and body region segments
SEMICONDUCTOR COMPONENTS IND LLC0 citations62
US11605734B2Mar 14, 2023
Transistor device having a source region segments and body region segments
SEMICONDUCTOR COMPONENTS IND LLC0 citations62
US11227928B1Jan 18, 2022
Termination structures for trench-gate field-effect transistors
SEMICONDUCTOR COMPONENTS IND LLC0 citations51
US10340372B1Jul 2, 2019
Transistor device having a pillar structure
SEMICONDUCTOR COMPONENTS IND LLC0 citations51