Inventor
SHEEN DONG SUN
KR37 patents
⚠️ This page may combine multiple inventors who share the name “SHEEN DONG SUN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SK HYNIX INC
15 patentsUS9245962B1Jan 26, 2016
Method of manufacturing semiconductor device
SK HYNIX INC39 citations93
US11545190B2Jan 3, 2023
Semiconductor memory device
SK HYNIX INC6 citations86
US9466609B2Oct 11, 2016
3-dimensional nonvolatile memory device and method of manufacturing the same
SK HYNIX INC3 citations73
US10373973B2Aug 6, 2019
Method of manufacturing semiconductor device through by-product removal from conductive layer
SK HYNIX INC3 citations70
US9385135B2Jul 5, 2016
Nonvolatile memory device and method for fabricating the same
SK HYNIX INC2 citations63
US9159570B2Oct 13, 2015
Non-volatile memory device and method for fabricating the same
SK HYNIX INC3 citations63
US12224031B2Feb 11, 2025
Semiconductor memory device
SK HYNIX INC0 citations62
US12225710B2Feb 11, 2025
Memory device with cross shape active layer surrounded by word line
SK HYNIX INC0 citations62
US12148501B2Nov 19, 2024
Semiconductor memory device
SK HYNIX INC0 citations62
US11871556B2Jan 9, 2024
Memory device
SK HYNIX INC1 citations62
US10644029B1May 5, 2020
Semiconductor device and method of fabricating the same
SK HYNIX INC0 citations52
US10559589B2Feb 11, 2020
Semiconductor device and method of fabricating the same
SK HYNIX INC0 citations52
US10546877B2Jan 28, 2020
Semiconductor device and method of fabricating the same
SK HYNIX INC0 citations52
US10714499B2Jul 14, 2020
Method of manufacturing semiconductor device
SK HYNIX INC0 citations49
US11832434B2Nov 28, 2023
Memory cell and memory device
SK HYNIX INC0 citations48
HYNIX SEMICONDUCTOR INC
14 patentsUS7888208B2Feb 15, 2011
Method of fabricating non-volatile memory device
HYNIX SEMICONDUCTOR INC10 citations84
US7655533B2Feb 2, 2010
Semiconductor device having reduced standby leakage current and increased driving current and method for manufacturing the same
HYNIX SEMICONDUCTOR INC15 citations83
US7585730B1Sep 8, 2009
Method of fabricating a non-volatile memory device
HYNIX SEMICONDUCTOR INC13 citations83
US7087515B2Aug 8, 2006
Method for forming flowable dielectric layer in semiconductor device
HYNIX SEMICONDUCTOR INC10 citations73
US8048742B2Nov 1, 2011
Transistor including bulb-type recess channel and method for fabricating the same
HYNIX SEMICONDUCTOR INC4 citations63
US7687355B2Mar 30, 2010
Method for manufacturing fin transistor that prevents etching loss of a spin-on-glass insulation layer
HYNIX SEMICONDUCTOR INC2 citations63
US7655534B2Feb 2, 2010
Method of forming fin transistor
HYNIX SEMICONDUCTOR INC6 citations62
US7538007B2May 26, 2009
Semiconductor device with flowable insulation layer formed on capacitor and method for fabricating the same
HYNIX SEMICONDUCTOR INC2 citations62
US7687362B2Mar 30, 2010
Semiconductor device with increased channel length and width and method for manufacturing the same
HYNIX SEMICONDUCTOR INC0 citations52
US7166519B2Jan 23, 2007
Method for isolating semiconductor devices with use of shallow trench isolation method
HYNIX SEMICONDUCTOR INC1 citations52
US7687371B2Mar 30, 2010
Method of forming isolation structure of semiconductor device for preventing excessive loss during recess gate formation
HYNIX SEMICONDUCTOR INC1 citations51
US7501687B2Mar 10, 2009
Method of forming isolation structure of semiconductor device for preventing excessive loss during recess gate formation
HYNIX SEMICONDUCTOR INC0 citations51
US7795086B2Sep 14, 2010
Method of manufacturing semiconductor device using salicide process
HYNIX SEMICONDUCTOR INC0 citations41
US7563654B2Jul 21, 2009
Method of manufacturing semiconductor device for formation of pin transistor
HYNIX SEMICONDUCTOR INC0 citations41