Inventor
ASAMURA TAKESHI
JP6 patents
Patents
6 patentsUS6074938AJun 13, 2000
Method of forming a semiconductor device comprising a dummy polysilicon gate electrode short-circuited to a dummy element region in a substrate
TOSHIBA KK32 citations89
US6521528B1Feb 18, 2003
Semiconductor device and method of making thereof
TOSHIBA KK8 citations70
US6188136B1Feb 13, 2001
Semiconductor device including a wiring layer having a non-doped or high resistivity polycrystal silicon portion
TOSHIBA KK8 citations70
US6925343B2Aug 2, 2005
Flow conversion system for a manufacturing process, method for converting a process flow, system for controlling manufacturing process, method for controlling a manufacturing process and a computer program product
TOSHIBA KK3 citations59
US6512278B2Jan 28, 2003
Stacked semiconductor integrated circuit device having an inter-electrode barrier to silicide formation
TOSHIBA KK3 citations59
US6475853B2Nov 5, 2002
Stacked semiconductor integrated circuit device and manufacturing method thereof
TOSHIBA KK1 citations49