Inventor
LIU CHANGZE
CN3 patents
Patents
3 patentsUS9018968B2Apr 28, 2015
Method for testing density and location of gate dielectric layer trap of semiconductor device
HUANG RU17 citations81
US8866507B2Oct 21, 2014
Method for testing trap density of gate dielectric layer in semiconductor device having no substrate contact
HUANG RU1 citations49
US9099500B2Aug 4, 2015
Programmable array of silicon nanowire field effect transistor and method for fabricating the same
HUANG RU0 citations39