Inventor

CHEN WEI-CHUAN

TW64 patents

⚠️ This page may combine multiple inventors who share the name “CHEN WEI-CHUAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

CHEN WEI-CHUAN

QUALCOMM INC

Amorphous alloy space for perpendicular MTJs

Magnetic tunnel junction (MTJ) devices with varied breakdown voltages in different memory arrays fabricated in a same semiconductor die to facilitate different memory applications

Self-compensation of stray field of perpendicular magnetic elements

Thermally tolerant perpendicular magnetic anisotropy coupled elements for spin-transfer torque switching device

High aspect ratio vertical interconnect access (via) interconnections in magnetic random access memory (MRAM) bit cells

Embedded magnetoresistive random access memory (MRAM) integration with top contacts

Magnetic tunnel junction and method for fabricating a magnetic tunnel junction

Spin-transfer switching magnetic element utilizing a composite free layer comprising a superparamagnetic layer

Replacement conductive hard mask for multi-step magnetic tunnel junction (MTJ) etch

Multiple (multi-) level cell (MLC) non-volatile (NV) memory (NVM) matrix circuits for performing matrix computations with multi-bit input vectors

Dynamic memory protection

Magnetoresistive (MR) sensors employing dual MR devices for differential MR sensing

De-integrated trench formation for advanced MRAM integration

Switching film structure for magnetic random access memory (MRAM) cell

Amorphous spacerlattice spacer for perpendicular MTJs

Methods of integrated shielding into MTJ device for MRAM

Varying energy barriers of magnetic tunnel junctions (MTJs) in different magneto-resistive random access memory (MRAM) arrays in a semiconductor die to facilitate use of MRAM for different memory applications

Double-patterned magneto-resistive random access memory (MRAM) for reducing magnetic tunnel junction (MTJ) pitch for increased MRAM bit cell density

Double-patterned magneto-resistive random access memory (MRAM) for reducing magnetic tunnel junction (MTJ) pitch for increased MRAM bit cell density

Dynamically controlling voltage for access operations to magneto-resistive random access memory (MRAM) bit cells to account for ambient temperature

Shadow-effect compensated fabrication of magnetic tunnel junction (MTJ) elements

Etch-resistant protective coating for a magnetic tunnel junction device

Integration of through glass via (TGV) filter and acoustic filter

Method of fabricating a magnetic tunnel junction (MTJ) device with reduced switching current

Solenoid structure with conductive pillar technology

Magnetic Tunnel Junction (MTJ) on planarized electrode

CHEN WEI-CHUAN

Thermally tolerant perpendicular magnetic anisotropy coupled elements for spin-transfer torque switching device

Fabricating a magnetic tunnel junction storage element

Magnetic storage element utilizing improved pinned layer stack

Methods of integrated shielding into MTJ device for MRAM

Composite hardmask architecture and method of creating non-uniform current path for spin torque driven magnetic tunnel junction

Symmetrically switchable spin-transfer-torque magnetoresistive device

IND TECH RES INST

Magnetic tunnel junction devices and magnetic random access memory

Magnetic memory device

Magnetic memory element utilizing spin transfer switching

Magnetic random access memory with lower switching field

Magnetic memory element utilizing spin transfer switching

Magnetic memory cell structure with thermal assistant and magnetic dynamic random access memory

HEFECHIP CORPORATION LTD

Method for fabricating magnetic tunneling junction element with a composite capping layer

Magnetic tunneling junction element with a composite capping layer and magnetoresistive random access memory device using the same

Asymmetric engineered storage layer of magnetic tunnel junction element for magnetic memory device

Semiconductor memory structure with magnetic tunneling junction stack and method for forming the same

Methods for fabricating MRAM with void free interlayer dielectric

ASUSTEK COMP INC

Input device

ZHU XIAOCHUN

Strain induced reduction of switching current in spin-transfer torque switching devices

LI XIA

MTP MTJ device

TAIWAN SEMICONDUCTOR MFG

Flow control valve incorporating an inflatable bag

UNIV CHINA MEDICAL

Simulated method and system for navigating surgical instrument based on tomography

CHOU JUNG-CHUAN

Multi-electrode measuring system

KANG SEUNG H

Magnetic tunnel junction (MTJ) on planarized electrode