Inventor
LU TSUO-WEN
TW39 patents
⚠️ This page may combine multiple inventors who share the name “LU TSUO-WEN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
UNITED MICROELECTRONICS CORP
27 patentsUS10204788B1Feb 12, 2019
Method of forming high dielectric constant dielectric layer by atomic layer deposition
UNITED MICROELECTRONICS CORP341 citations98
US10797157B1Oct 6, 2020
Semiconductor device and method for fabricating the same
UNITED MICROELECTRONICS CORP17 citations94
US9685533B1Jun 20, 2017
Transistor with SiCN/SiOCN mulitlayer spacer
UNITED MICROELECTRONICS CORP17 citations92
US9431483B1Aug 30, 2016
Nanowire and method of fabricating the same
UNITED MICROELECTRONICS CORP16 citations92
US9130014B2Sep 8, 2015
Method for fabricating shallow trench isolation structure
UNITED MICROELECTRONICS CORP8 citations84
US11171091B2Nov 9, 2021
Semiconductor device having contact plug connected to gate structure on PMOS region
UNITED MICROELECTRONICS CORP4 citations83
US10217750B1Feb 26, 2019
Buried word line structure and method of making the same
UNITED MICROELECTRONICS CORP9 citations83
US9871136B2Jan 16, 2018
Semiconductor device
UNITED MICROELECTRONICS CORP7 citations82
US11749743B2Sep 5, 2023
Semiconductor device and method for fabricating the same
UNITED MICROELECTRONICS CORP2 citations73
US9882022B2Jan 30, 2018
Method for manufacturing transistor with SiCN/SiOCN multilayer spacer
UNITED MICROELECTRONICS CORP2 citations73
US12057401B2Aug 6, 2024
Semiconductor device having contact plug connected to gate structure on PMOS region
UNITED MICROELECTRONICS CORP1 citations72
US11756888B2Sep 12, 2023
Semiconductor device having contact plug connected to gate structure on PMOS region
UNITED MICROELECTRONICS CORP2 citations72
US10497704B2Dec 3, 2019
Buried word line structure and method of making the same
UNITED MICROELECTRONICS CORP3 citations72
US9034705B2May 19, 2015
Method of forming semiconductor device
UNITED MICROELECTRONICS CORP5 citations72
US10056288B1Aug 21, 2018
Semiconductor device and fabrication method thereof
UNITED MICROELECTRONICS CORP2 citations71
US12438092B2Oct 7, 2025
Semiconductor device having contact plug connected to gate structure on PMOS region
UNITED MICROELECTRONICS CORP0 citations62
US12107151B2Oct 1, 2024
Semiconductor device and method for fabricating the same
UNITED MICROELECTRONICS CORP0 citations62
US11508832B2Nov 22, 2022
Semiconductor device and method for fabricating the same
UNITED MICROELECTRONICS CORP0 citations62
US10991810B2Apr 27, 2021
Semiconductor device and method for fabricating the same
UNITED MICROELECTRONICS CORP0 citations62
US9330902B1May 3, 2016
Method for forming HfOx film based on atomic layer deposition (ALD) process
UNITED MICROELECTRONICS CORP2 citations62
US9117878B2Aug 25, 2015
Method for manufacturing shallow trench isolation
UNITED MICROELECTRONICS CORP3 citations62
US11133320B2Sep 28, 2021
Method for fabricating semiconductor device
UNITED MICROELECTRONICS CORP0 citations60
US10658369B2May 19, 2020
Semiconductor device and method for fabricating the same
UNITED MICROELECTRONICS CORP1 citations60
US9735235B2Aug 15, 2017
Nanowire and method of fabricating the same
UNITED MICROELECTRONICS CORP0 citations52
US10847517B2Nov 24, 2020
Method for forming semiconductor device having a multi-thickness gate trench dielectric layer
UNITED MICROELECTRONICS CORP0 citations51
US10373958B2Aug 6, 2019
Semiconductor device having a multi-thickness gate trench dielectric layer
UNITED MICROELECTRONICS CORP0 citations51
US9349599B1May 24, 2016
Method for fabricating semiconductor device
UNITED MICROELECTRONICS CORP0 citations48
FUJIAN JINHUA INTEGRATED CIRCUIT CO LTD
4 patentsUS11557645B2Jan 17, 2023
Semiconductor memory device and method of forming the same
FUJIAN JINHUA INTEGRATED CIRCUIT CO LTD3 citations71
US11881503B2Jan 23, 2024
Semiconductor memory device
FUJIAN JINHUA INTEGRATED CIRCUIT CO LTD0 citations60
US12513888B2Dec 30, 2025
Memory device and manufacturing method thereof
FUJIAN JINHUA INTEGRATED CIRCUIT CO LTD0 citations54
US12408328B2Sep 2, 2025
Semiconductor device and method of fabricating the same
FUJIAN JINHUA INTEGRATED CIRCUIT CO LTD0 citations51