Inventor
KAWANA NORIYASU
JP3 patents
Patents
3 patentsUS11404269B2Aug 2, 2022
Single crystal substrate with undulating ridges and silicon carbide substrate
SEIKO EPSON CORP0 citations55
US9758902B2Sep 12, 2017
Method for producing 3C-SiC epitaxial layer, 3C-SiC epitaxial substrate, and semiconductor device
SEIKO EPSON CORP0 citations45
US11142821B2Oct 12, 2021
Method for producing single crystal substrate having a plurality of grooves using a pair of masks
SEIKO EPSON CORP0 citations44