Inventor
CHIANG TONY
US111 patents
⚠️ This page may combine multiple inventors who share the name “CHIANG TONY”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
APPLIED MATERIALS INC
21 patentsUS6919275B2Jul 19, 2005
Method of preventing diffusion of copper through a tantalum-comprising barrier layer
APPLIED MATERIALS INC87 citations99
US6328871B1Dec 11, 2001
Barrier layer for electroplating processes
APPLIED MATERIALS INC161 citations99
US6287977B1Sep 11, 2001
Method and apparatus for forming improved metal interconnects
APPLIED MATERIALS INC161 citations99
US6066892AMay 23, 2000
Copper alloy seed layer for copper metallization in an integrated circuit
APPLIED MATERIALS INC185 citations99
US6037257AMar 14, 2000
Sputter deposition and annealing of copper alloy metallization
APPLIED MATERIALS INC117 citations99
US7253109B2Aug 7, 2007
Method of depositing a tantalum nitride/tantalum diffusion barrier layer system
APPLIED MATERIALS INC44 citations96
US7074714B2Jul 11, 2006
Method of depositing a metal seed layer on semiconductor substrates
APPLIED MATERIALS INC26 citations96
US6992012B2Jan 31, 2006
Method and apparatus for forming improved metal interconnects
APPLIED MATERIALS INC35 citations96
US6758947B2Jul 6, 2004
Damage-free sculptured coating deposition
APPLIED MATERIALS INC47 citations96
US6709987B2Mar 23, 2004
Method and apparatus for forming improved metal interconnects
APPLIED MATERIALS INC55 citations96
US6627050B2Sep 30, 2003
Method and apparatus for depositing a tantalum-containing layer on a substrate
APPLIED MATERIALS INC67 citations96
US6605197B1Aug 12, 2003
Method of sputtering copper to fill trenches and vias
APPLIED MATERIALS INC57 citations96
US6559061B2May 6, 2003
Method and apparatus for forming improved metal interconnects
APPLIED MATERIALS INC63 citations96
US6387805B2May 14, 2002
Copper alloy seed layer for copper metallization
APPLIED MATERIALS INC58 citations96
US6160315ADec 12, 2000
Copper alloy via structure
APPLIED MATERIALS INC73 citations96
US6139699AOct 31, 2000
Sputtering methods for depositing stress tunable tantalum and tantalum nitride films
APPLIED MATERIALS INC72 citations96
US7381639B2Jun 3, 2008
Method of depositing a metal seed layer on semiconductor substrates
APPLIED MATERIALS INC10 citations93
US6458255B2Oct 1, 2002
Ultra-low resistivity tantalum films and methods for their deposition
APPLIED MATERIALS INC32 citations93
US6790776B2Sep 14, 2004
Barrier layer for electroplating processes
APPLIED MATERIALS INC34 citations92
US6488823B1Dec 3, 2002
Stress tunable tantalum and tantalum nitride films
APPLIED MATERIALS INC30 citations92
US6313033B1Nov 6, 2001
Ionized metal plasma Ta, TaNx, W, and WNx liners for gate electrode applications
APPLIED MATERIALS INC33 citations92
INTERMOLECULAR INC
10 patentsUS7972897B2Jul 5, 2011
Methods for forming resistive switching memory elements
INTERMOLECULAR INC75 citations98
US7629198B2Dec 8, 2009
Methods for forming nonvolatile memory elements with resistive-switching metal oxides
INTERMOLECULAR INC118 citations98
US8343813B2Jan 1, 2013
Resistive-switching memory elements having improved switching characteristics
INTERMOLECULAR INC30 citations95
US7704789B2Apr 27, 2010
Methods for forming resistive switching memory elements
INTERMOLECULAR INC29 citations93
US7678607B2Mar 16, 2010
Methods for forming resistive switching memory elements
INTERMOLECULAR INC40 citations93
US9076523B2Jul 7, 2015
Methods of manufacturing embedded bipolar switching resistive memory
INTERMOLECULAR INC25 citations92
US7902064B1Mar 8, 2011
Method of forming a layer to enhance ALD nucleation on a substrate
INTERMOLECULAR INC37 citations92
US7863087B1Jan 4, 2011
Methods for forming resistive-switching metal oxides for nonvolatile memory elements
INTERMOLECULAR INC25 citations92
US7824935B2Nov 2, 2010
Methods of combinatorial processing for screening multiple samples on a semiconductor substrate
INTERMOLECULAR INC25 citations92
US8053364B2Nov 8, 2011
Closed-loop sputtering controlled to enhance electrical characteristics in deposited layer
INTERMOLECULAR INC18 citations90
WANG YUN
4 patentsUS8072795B1Dec 6, 2011
Biploar resistive-switching memory with a single diode per memory cell
WANG YUN39 citations96
US8787066B2Jul 22, 2014
Method for forming resistive switching memory elements with improved switching behavior
WANG YUN8 citations84
US8681530B2Mar 25, 2014
Nonvolatile memory device having a current limiting element
WANG YUN11 citations84
US8618525B2Dec 31, 2013
Work function tailoring for nonvolatile memory applications
WANG YUN6 citations84
CHIANG TONY
4 patentsUS9390970B2Jul 12, 2016
Method for depositing a diffusion barrier layer and a metal conductive layer
CHIANG TONY10 citations92
US8420478B2Apr 16, 2013
Controlled localized defect paths for resistive memories
CHIANG TONY17 citations92
US8101937B2Jan 24, 2012
Multistate nonvolatile memory elements
CHIANG TONY15 citations92
US8298891B1Oct 30, 2012
Resistive-switching memory element
CHIANG TONY8 citations84
PHATAK PRASHANT
2 patentsKUMAR PRAGATI
2 patentsMILLER MICHAEL
2 patentsKUMAR NITIN
2 patentsMALHOTRA SANDRA G
1 patentUNIVESITY OF CALIFORNIA
1 patentSHANKER SUNIL
1 patentShowing the top 50 of 111 patents by PatentIndex Score.