Inventor

BOSANG KIM

US2 patents

Patents

2 patents

US7153737B2Dec 26, 2006

Self-aligned, silicided, trench-based, DRAM/EDRAM processes with improved retention

IBM11 citations82

US7564086B2Jul 21, 2009

Self-aligned, silicided, trench-based DRAM/eDRAM processes with improved retention

IBM5 citations57