Inventor
KANEKO KISHOU
JP31 patents
⚠️ This page may combine multiple inventors who share the name “KANEKO KISHOU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
RENESAS ELECTRONICS CORP
23 patentsUS8378341B2Feb 19, 2013
Semiconductor device and method of manufacturing semiconductor device
RENESAS ELECTRONICS CORP94 citations99
US9129937B2Sep 8, 2015
Semiconductor device and method of manufacturing semiconductor device
RENESAS ELECTRONICS CORP48 citations98
US9312394B2Apr 12, 2016
Semiconductor device and method of manufacturing semiconductor device
RENESAS ELECTRONICS CORP29 citations94
US9754816B2Sep 5, 2017
Semiconductor device and method of manufacturing semiconductor device
RENESAS ELECTRONICS CORP14 citations92
US9349844B2May 24, 2016
Semiconductor device manufacturing method
RENESAS ELECTRONICS CORP7 citations84
US9331071B2May 3, 2016
Semiconductor device and manufacturing method thereof
RENESAS ELECTRONICS CORP13 citations84
US8373256B2Feb 12, 2013
Semiconductor device
RENESAS ELECTRONICS CORP11 citations84
US9053961B2Jun 9, 2015
Semiconductor device and method of manufacturing the semiconductor device
RENESAS ELECTRONICS CORP5 citations73
US8779594B2Jul 15, 2014
Semiconductor device having multi-layered interconnect structure
RENESAS ELECTRONICS CORP5 citations73
US9000540B2Apr 7, 2015
Semiconductor device and a method for manufacturing a semiconductor device
RENESAS ELECTRONICS CORP2 citations63
US9190475B2Nov 17, 2015
Semiconductor device and semiconductor device manufacturing method
RENESAS ELECTRONICS CORP2 citations61
US9680031B2Jun 13, 2017
Semiconductor device and manufacturing method thereof
RENESAS ELECTRONICS CORP1 citations52
US9530769B2Dec 27, 2016
Semiconductor device with electro-static discharge protection device above semiconductor device area
RENESAS ELECTRONICS CORP1 citations52
US9368403B2Jun 14, 2016
Method for manufacturing a semiconductor device
RENESAS ELECTRONICS CORP0 citations52
US9362318B2Jun 7, 2016
Method of manufacturing a semiconductor device
RENESAS ELECTRONICS CORP1 citations52
US9337187B2May 10, 2016
Semiconductor device
RENESAS ELECTRONICS CORP0 citations52
US9166057B2Oct 20, 2015
Semiconductor device having the bottom gate type transistor formed in a wiring layer
RENESAS ELECTRONICS CORP0 citations52
US9153588B2Oct 6, 2015
Semiconductor device and a method for manufacturing a semiconductor device
RENESAS ELECTRONICS CORP0 citations52
US9048291B2Jun 2, 2015
Method of manufacturing a semiconductor device having multi-layered interconnect structure
RENESAS ELECTRONICS CORP1 citations52
US9356026B2May 31, 2016
Semiconductor device and semiconductor device manufacturing method
RENESAS ELECTRONICS CORP0 citations51
US9230865B2Jan 5, 2016
Semiconductor device and manufacturing method thereof
RENESAS ELECTRONICS CORP0 citations51
US9082643B2Jul 14, 2015
Semiconductor device and manufacturing method thereof
RENESAS ELECTRONICS CORP0 citations51
US9496403B2Nov 15, 2016
Semiconductor device and method of manufacturing the same
RENESAS ELECTRONICS CORP0 citations42
KANEKO KISHOU
5 patentsUS8618537B2Dec 31, 2013
Semiconductor device and method for manufacturing the same
KANEKO KISHOU38 citations93
US9263399B2Feb 16, 2016
Semiconductor device with electro-static discharge protection device above semiconductor device area
KANEKO KISHOU2 citations62
US8835190B2Sep 16, 2014
Semiconductor apparatus
KANEKO KISHOU2 citations62
US8072048B2Dec 6, 2011
Semiconductor apparatus
KANEKO KISHOU2 citations62
US9035360B2May 19, 2015
Semiconductor device and SiP device using the same
KANEKO KISHOU0 citations51