Inventor
MURUKESAN KARTHICK
TW11 patents
Patents
11 patentsUS10535730B2Jan 14, 2020
High voltage metal-oxide-semiconductor (HVMOS) device integrated with a high voltage junction termination (HVJT) device
TAIWAN SEMICONDUCTOR MFG CO LTD8 citations83
US9680009B2Jun 13, 2017
High voltage semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD8 citations83
US11145713B2Oct 12, 2021
High voltage metal-oxide-semiconductor (HVMOS) device integrated with a high voltage junction termination (HVJT) device
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations72
US11942543B2Mar 26, 2024
Semiconductor device structure with high voltage device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11424359B2Aug 23, 2022
Semiconductor device structure with high voltage device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10964781B2Mar 30, 2021
High voltage resistor device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10892360B2Jan 12, 2021
Semiconductor device structure with high voltage device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10879236B2Dec 29, 2020
Bootstrap metal-oxide-semiconductor (MOS) device integrated with a high voltage MOS (HVMOS) device and a high voltage junction termination (HVJT) device
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations61
US11862675B2Jan 2, 2024
High voltage metal-oxide-semiconductor (HVMOS) device integrated with a high voltage junction termination (HVJT) device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10297661B2May 21, 2019
High voltage resistor device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10679987B2Jun 9, 2020
Bootstrap metal-oxide-semiconductor (MOS) device integrated with a high voltage MOS (HVMOS) device and a high voltage junction termination (HVJT) device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations50