Inventor

HUANG GUANGYU

US36 patents

⚠️ This page may combine multiple inventors who share the name “HUANG GUANGYU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

HUANG GUANGYU

MICRON TECHNOLOGY INC

Integrated structures comprising vertical channel material and having conductively-doped semiconductor material directly against lower sidewalls of the channel material

Integrated structures comprising channel material extending into source material

Methods of forming integrated structures comprising vertical channel material and having conductively-doped semiconductor material directly against lower sidewalls of the channel material

Memory devices including memory cells and related methods

Memory array and methods used in forming a memory array

Integrated structures comprising vertical channel material and having conductively-doped semiconductor material directly against lower sidewalls of the channel material

Devices and systems with string drivers including high band gap material and methods of formation

Asymmetrical multi-gate string driver for memory device

Integrated structures containing vertically-stacked memory cells

Memory devices including indium-containing materials, and related electronic systems

Transistors including oxide semiconductive materials, and related microelectronic devices, memory devices, electronic systems, and methods

Methods of forming integrated structures comprising vertical channel material and having conductively-doped semiconductor material directly against lower sidewalls of the channel material

Memory array and methods used in forming a memory array

Integrated assemblies having polycrystalline first semiconductor material adjacent conductively-doped second semiconductor material

Memory array and methods used in forming a memory array

Integrated structures containing vertically-stacked memory cells

Apparatuses including memory cells and related methods

Integrated assemblies having polycrystalline first semiconductor material adjacent conductively-doped second semiconductor material

Integrated structures containing vertically-stacked memory cells

Multi-gate string drivers having shared pillar structure

Transistors with raised extension regions and semiconductor fins

Asymmetrical multi-gate string driver for memory device

INTEL CORP

Stacked thin channels for boost and leakage improvement

Stacked thin channels for boost and leakage improvement

Three dimensional memory structure

Three dimensional memory structure

Flash memory devices incorporating a polydielectric layer

Method for making a flash memory device

Intel NDTM US LLC

Vertical string driver with extended gate junction structure

Metal hybrid charge storage structure for memory

Vertical string driver with channel field management structure

LODESTAR LICENSING GROUP LLC

Integrated structures comprising vertical channel material and having conductively-doped semiconductor material directly against lower sidewalls of the channel material

Multi-gate string drivers having shared pillar structure

GLOBALFOUNDRIES SG PTE LTD

Method to tune narrow width effect with raised S/D structure

ENSHI TUJIA AND MIAO AUTONOMOUS PREFECTURE ACAD OF AGRICULTURAL SCIENCES ENSHI TUJIA

Method for detecting selenoamino acid in selenoprotein

YIN CHUNSHAN

Method to tune narrow width effect with raised S/D structure