Inventor
SAMAVEDAM SRIKANTH B
US26 patents
⚠️ This page may combine multiple inventors who share the name “SAMAVEDAM SRIKANTH B”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
FREESCALE SEMICONDUCTOR INC
15 patentsUS6897095B1May 24, 2005
Semiconductor process and integrated circuit having dual metal oxide gate dielectric with single metal gate electrode
FREESCALE SEMICONDUCTOR INC132 citations98
US6894353B2May 17, 2005
Capped dual metal gate transistors for CMOS process and method for making the same
FREESCALE SEMICONDUCTOR INC70 citations98
US6790719B1Sep 14, 2004
Process for forming dual metal gate structures
FREESCALE SEMICONDUCTOR INC60 citations94
US7750374B2Jul 6, 2010
Process for forming an electronic device including a transistor having a metal gate electrode
FREESCALE SEMICONDUCTOR INC105 citations93
US7445976B2Nov 4, 2008
Method of forming a semiconductor device having an interlayer and structure therefor
FREESCALE SEMICONDUCTOR INC9 citations84
US6972224B2Dec 6, 2005
Method for fabricating dual-metal gate device
FREESCALE SEMICONDUCTOR INC16 citations84
US7655550B2Feb 2, 2010
Method of making metal gate transistors
FREESCALE SEMICONDUCTOR INC14 citations83
US7445981B1Nov 4, 2008
Method for forming a dual metal gate structure
FREESCALE SEMICONDUCTOR INC15 citations83
US7709331B2May 4, 2010
Dual gate oxide device integration
FREESCALE SEMICONDUCTOR INC7 citations73
US8003454B2Aug 23, 2011
CMOS process with optimized PMOS and NMOS transistor devices
FREESCALE SEMICONDUCTOR INC3 citations63
US7858482B2Dec 28, 2010
Method of forming a semiconductor device using stress memorization
FREESCALE SEMICONDUCTOR INC5 citations63
US8039339B2Oct 18, 2011
Separate layer formation in a semiconductor device
FREESCALE SEMICONDUCTOR INC4 citations62
US7666730B2Feb 23, 2010
Method for forming a dual metal gate structure
FREESCALE SEMICONDUCTOR INC4 citations61
US7683439B2Mar 23, 2010
Semiconductor device having a metal carbide gate with an electropositive element and a method of making the same
FREESCALE SEMICONDUCTOR INC1 citations51
US7910442B2Mar 22, 2011
Process for making a semiconductor device using partial etching
FREESCALE SEMICONDUCTOR INC0 citations41
MOTOROLA INC
4 patentsUS6514808B1Feb 4, 2003
Transistor having a high K dielectric and short gate length and method therefor
MOTOROLA INC104 citations98
US6320784B1Nov 20, 2001
Memory cell and method for programming thereof
MOTOROLA INC180 citations98
US6475841B1Nov 5, 2002
Transistor with shaped gate electrode and method therefor
MOTOROLA INC32 citations92
US6423632B1Jul 23, 2002
Semiconductor device and a process for forming the same
MOTOROLA INC34 citations92