Inventor
HYUNG YONG WOO
KR30 patents
⚠️ This page may combine multiple inventors who share the name “HYUNG YONG WOO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
18 patentsUS6740977B2May 25, 2004
Insulating layers in semiconductor devices having a multi-layer nanolaminate structure of SiNx thin film and BN thin film and methods for forming the same
SAMSUNG ELECTRONICS CO LTD210 citations99
US6815350B2Nov 9, 2004
Method for forming a thin film using an atomic layer deposition (ALD) process
SAMSUNG ELECTRONICS CO LTD548 citations97
US6962876B2Nov 8, 2005
Method for forming a low-k dielectric layer for a semiconductor device
SAMSUNG ELECTRONICS CO LTD77 citations96
US7481882B2Jan 27, 2009
Method for forming a thin film
SAMSUNG ELECTRONICS CO LTD34 citations92
US6207489B1Mar 27, 2001
Method for manufacturing capacitor of semiconductor memory device having tantalum oxide film
SAMSUNG ELECTRONICS CO LTD35 citations92
US7803679B2Sep 28, 2010
Method of forming a vertical diode and method of manufacturing a semiconductor device using the same
SAMSUNG ELECTRONICS CO LTD8 citations84
US7563677B2Jul 21, 2009
Recessed gate electrode and method of forming the same and semiconductor device having the recessed gate electrode and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD11 citations82
US7741222B2Jun 22, 2010
Etch stop structure and method of manufacture, and semiconductor device and method of manufacture
SAMSUNG ELECTRONICS CO LTD17 citations81
US6416584B1Jul 9, 2002
Apparatus for forming a film on a substrate
SAMSUNG ELECTRONICS CO LTD11 citations74
US5523255AJun 4, 1996
Method for forming a device isolation film of a semiconductor device
SAMSUNG ELECTRONICS CO LTD10 citations68
US7972923B2Jul 5, 2011
Non-volatile memory device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD3 citations62
US7723182B2May 25, 2010
Storage electrode of a capacitor and a method of forming the same
SAMSUNG ELECTRONICS CO LTD3 citations62
US6881637B2Apr 19, 2005
Method of forming a gate electrode, method of manufacturing a semiconductor device having the gate electrode, and method of oxidizing a substrate
SAMSUNG ELECTRONICS CO LTD2 citations62
US7855117B2Dec 21, 2010
Method of forming a thin layer and method of manufacturing a semiconductor device
SAMSUNG ELECTRONICS CO LTD2 citations61
US7736963B2Jun 15, 2010
Method of forming a gate structure for a semiconductor device and method of forming a cell gate structure for a non-volatile memory device
SAMSUNG ELECTRONICS CO LTD5 citations61
US7888204B2Feb 15, 2011
Method of forming nonvolatile memory device having floating gate and related device
SAMSUNG ELECTRONICS CO LTD2 citations60
US6913979B2Jul 5, 2005
Method of manufacturing a metal oxide semiconductor transistor
SAMSUNG ELECTRONICS CO LTD2 citations59
US7008844B2Mar 7, 2006
Method of forming a gate of a non-volatile memory device
SAMSUNG ELECTRONICS CO LTD0 citations49
SAMSUNG DISPLAY CO LTD
5 patentsUS9927659B2Mar 27, 2018
Liquid crystal display
SAMSUNG DISPLAY CO LTD3 citations73
US9798182B2Oct 24, 2017
Liquid crystal display device
SAMSUNG DISPLAY CO LTD4 citations72
US8981390B2Mar 17, 2015
Display device
SAMSUNG DISPLAY CO LTD0 citations52
US9551906B2Jan 24, 2017
Liquid crystal display
SAMSUNG DISPLAY CO LTD0 citations51
US10199403B2Feb 5, 2019
Liquid crystal display panel having a first column, a second column, and a fourth color filter made of a same material
SAMSUNG DISPLAY CO LTD0 citations35
FUJIAN JINHUA INTEGRATED CIRCUIT CO LTD
2 patentsUS12057396B2Aug 6, 2024
Semiconductor device having an air gap between a contact pad and a sidewall of contact hole
FUJIAN JINHUA INTEGRATED CIRCUIT CO LTD2 citations73
US12400958B2Aug 26, 2025
Method for forming semiconductor device having an air gap between a contact pad and a sidewall of contact hole
FUJIAN JINHUA INTEGRATED CIRCUIT CO LTD0 citations62