P

Inventor

HYUNG YONG WOO

KR30 patents
⚠️ This page may combine multiple inventors who share the name “HYUNG YONG WOO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

18 patents
US6740977B2May 25, 2004

Insulating layers in semiconductor devices having a multi-layer nanolaminate structure of SiNx thin film and BN thin film and methods for forming the same

SAMSUNG ELECTRONICS CO LTD210 citations99
US6815350B2Nov 9, 2004

Method for forming a thin film using an atomic layer deposition (ALD) process

SAMSUNG ELECTRONICS CO LTD548 citations97
US6962876B2Nov 8, 2005

Method for forming a low-k dielectric layer for a semiconductor device

SAMSUNG ELECTRONICS CO LTD77 citations96
US7481882B2Jan 27, 2009

Method for forming a thin film

SAMSUNG ELECTRONICS CO LTD34 citations92
US6207489B1Mar 27, 2001

Method for manufacturing capacitor of semiconductor memory device having tantalum oxide film

SAMSUNG ELECTRONICS CO LTD35 citations92
US7803679B2Sep 28, 2010

Method of forming a vertical diode and method of manufacturing a semiconductor device using the same

SAMSUNG ELECTRONICS CO LTD8 citations84
US7563677B2Jul 21, 2009

Recessed gate electrode and method of forming the same and semiconductor device having the recessed gate electrode and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD11 citations82
US7741222B2Jun 22, 2010

Etch stop structure and method of manufacture, and semiconductor device and method of manufacture

SAMSUNG ELECTRONICS CO LTD17 citations81
US6416584B1Jul 9, 2002

Apparatus for forming a film on a substrate

SAMSUNG ELECTRONICS CO LTD11 citations74
US5523255AJun 4, 1996

Method for forming a device isolation film of a semiconductor device

SAMSUNG ELECTRONICS CO LTD10 citations68
US7972923B2Jul 5, 2011

Non-volatile memory device and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD3 citations62
US7723182B2May 25, 2010

Storage electrode of a capacitor and a method of forming the same

SAMSUNG ELECTRONICS CO LTD3 citations62
US6881637B2Apr 19, 2005

Method of forming a gate electrode, method of manufacturing a semiconductor device having the gate electrode, and method of oxidizing a substrate

SAMSUNG ELECTRONICS CO LTD2 citations62
US7855117B2Dec 21, 2010

Method of forming a thin layer and method of manufacturing a semiconductor device

SAMSUNG ELECTRONICS CO LTD2 citations61
US7736963B2Jun 15, 2010

Method of forming a gate structure for a semiconductor device and method of forming a cell gate structure for a non-volatile memory device

SAMSUNG ELECTRONICS CO LTD5 citations61
US7888204B2Feb 15, 2011

Method of forming nonvolatile memory device having floating gate and related device

SAMSUNG ELECTRONICS CO LTD2 citations60
US6913979B2Jul 5, 2005

Method of manufacturing a metal oxide semiconductor transistor

SAMSUNG ELECTRONICS CO LTD2 citations59
US7008844B2Mar 7, 2006

Method of forming a gate of a non-volatile memory device

SAMSUNG ELECTRONICS CO LTD0 citations49

SAMSUNG DISPLAY CO LTD

5 patents

FUJIAN JINHUA INTEGRATED CIRCUIT CO LTD

2 patents

JI HO-CHUL

1 patent

PARK SANG-JIN

1 patent

JEE JUNG-GEUN

1 patent

TAE CHANG IL

1 patent

PARK EUN-KIL

1 patent