Inventor
LIN WEI-JUNG
TW65 patents
⚠️ This page may combine multiple inventors who share the name “LIN WEI-JUNG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
37 patentsUS10535748B2Jan 14, 2020
Method of forming a contact with a silicide region
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations83
US10361120B2Jul 23, 2019
Conductive feature formation and structure
TAIWAN SEMICONDUCTOR MFG CO LTD8 citations83
US11532561B2Dec 20, 2022
Different via configurations for different via interface requirements
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11062941B2Jul 13, 2021
Contact conductive feature formation and structure
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10580693B2Mar 3, 2020
Contact conductive feature formation and structure
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10504834B2Dec 10, 2019
Contact structure and the method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US9978583B2May 22, 2018
Opening fill process and structures formed thereby
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US9624576B2Apr 18, 2017
Systems and methods for gap filling improvement
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US9589892B2Mar 7, 2017
Interconnect structure and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US11101353B2Aug 24, 2021
Semiconductor device and method of manufacture
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US10475702B2Nov 12, 2019
Conductive feature formation and structure using bottom-up filling deposition
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US10418279B2Sep 17, 2019
Method of forming contact metal
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations72
US9711402B1Jul 18, 2017
Method of forming contact metal
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US9520327B2Dec 13, 2016
Methods of forming low resistance contacts
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations72
US11410880B2Aug 9, 2022
Phase control in contact formation
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations71
US12328890B2Jun 10, 2025
Contact with a silicide region
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12278188B2Apr 15, 2025
Different via configurations for different via interface requirements
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12211747B2Jan 28, 2025
Method of forming contact metal
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12148659B2Nov 19, 2024
Contact conductive feature formation and structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12142565B2Nov 12, 2024
Different via configurations for different via interface requirements
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12020981B2Jun 25, 2024
Conductive feature formation and structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11798843B2Oct 24, 2023
Conductive feature formation and structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11791208B2Oct 17, 2023
Method of forming contact metal
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11676859B2Jun 13, 2023
Contact conductive feature formation and structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11444028B2Sep 13, 2022
Contact structure and formation thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11411094B2Aug 9, 2022
Contact with a silicide region
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11232985B2Jan 25, 2022
Method of forming contact metal
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11195791B2Dec 7, 2021
Method for forming semiconductor contact structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11081563B2Aug 3, 2021
Formation of silicide contacts in semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US10971396B2Apr 6, 2021
Conductive feature formation and structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US9627313B2Apr 18, 2017
Opening fill process and structure formed thereby
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US12538543B2Jan 27, 2026
Methods of manufacture of semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12482705B2Nov 25, 2025
Conductive feature formation and structure using bottom-up filling deposition
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12417945B2Sep 16, 2025
Contact features of semiconductor device and method of forming same
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations61
US12288716B2Apr 29, 2025
Phase control in contact formation
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12002712B2Jun 4, 2024
Phase control in contact formation
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11973117B2Apr 30, 2024
Semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
TAIWAN SEMICONDUCTOR MFG
10 patentsUS9230795B1Jan 5, 2016
Directional pre-clean in silicide and contact formation
TAIWAN SEMICONDUCTOR MFG24 citations94
US9287170B2Mar 15, 2016
Contact structure and formation thereof
TAIWAN SEMICONDUCTOR MFG8 citations83
US9385080B2Jul 5, 2016
Interconnect structure and method of forming the same
TAIWAN SEMICONDUCTOR MFG4 citations73
US9368357B2Jun 14, 2016
Directional pre-clean in silicide and contact formation
TAIWAN SEMICONDUCTOR MFG4 citations73
US9245797B2Jan 26, 2016
Opening fill process and structure formed thereby
TAIWAN SEMICONDUCTOR MFG4 citations73
US9219009B2Dec 22, 2015
Method of integrated circuit fabrication
TAIWAN SEMICONDUCTOR MFG5 citations73
US8927418B1Jan 6, 2015
Systems and methods for reducing contact resistivity of semiconductor devices
TAIWAN SEMICONDUCTOR MFG5 citations73
US9165838B2Oct 20, 2015
Methods of forming low resistance contacts
TAIWAN SEMICONDUCTOR MFG5 citations72
US7768072B2Aug 3, 2010
Silicided metal gate for multi-threshold voltage configuration
TAIWAN SEMICONDUCTOR MFG6 citations63
US8536010B2Sep 17, 2013
Method for making a disilicide
TAIWAN SEMICONDUCTOR MFG4 citations62
CHANG CHUN PLASTICS CO LTD
1 patentNIEH CHUN-WEN
1 patentTAIWAN SEMICONDUCTOR MFG COMPANY LTD
1 patentShowing the top 50 of 65 patents by PatentIndex Score.