Inventor
LEE HONG-MAO
TW26 patents
⚠️ This page may combine multiple inventors who share the name “LEE HONG-MAO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
24 patentsUS10157995B2Dec 18, 2018
Integrating junction formation of transistors with contact formation
TAIWAN SEMICONDUCTOR MFG CO LTD9 citations84
US10535748B2Jan 14, 2020
Method of forming a contact with a silicide region
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations83
US10504834B2Dec 10, 2019
Contact structure and the method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US9624576B2Apr 18, 2017
Systems and methods for gap filling improvement
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10418279B2Sep 17, 2019
Method of forming contact metal
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations72
US9711402B1Jul 18, 2017
Method of forming contact metal
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US12328890B2Jun 10, 2025
Contact with a silicide region
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12211747B2Jan 28, 2025
Method of forming contact metal
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12046510B2Jul 23, 2024
Conductive feature formation and structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11791208B2Oct 17, 2023
Method of forming contact metal
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11444028B2Sep 13, 2022
Contact structure and formation thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11411094B2Aug 9, 2022
Contact with a silicide region
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11232985B2Jan 25, 2022
Method of forming contact metal
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11195791B2Dec 7, 2021
Method for forming semiconductor contact structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11031286B2Jun 8, 2021
Conductive feature formation and structure
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US12272621B2Apr 8, 2025
Buried conductive structure in semiconductor substrate
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US12439625B2Oct 7, 2025
Semiconductor device structure and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations59
US12432977B2Sep 30, 2025
Semiconductor device and method for manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations59
US10283359B2May 7, 2019
Systems and methods for gap filling improvement
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US12327788B2Jun 10, 2025
Gate to source drain interconnects
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US11482495B2Oct 25, 2022
Semiconductor arrangement and method for making
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10510664B2Dec 17, 2019
Contact structure and formation thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US9735107B2Aug 15, 2017
Contact structure and formation thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US12501657B2Dec 16, 2025
Selective silicide for stacked multi-gate device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations50