Inventor
WEIDGANS BERNHARD
DE29 patents
⚠️ This page may combine multiple inventors who share the name “WEIDGANS BERNHARD”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
INFINEON TECHNOLOGIES AG
26 patentsUS9666546B1May 30, 2017
Multi-layer metal pads
INFINEON TECHNOLOGIES AG6 citations82
US9502248B1Nov 22, 2016
Methods for making a semiconductor chip device
INFINEON TECHNOLOGIES AG5 citations82
US9875978B2Jan 23, 2018
Semiconductor chip device
INFINEON TECHNOLOGIES AG2 citations71
US10304782B2May 28, 2019
Compressive interlayer having a defined crack-stop edge extension
INFINEON TECHNOLOGIES AG4 citations69
US12456700B2Oct 28, 2025
Semiconductor die having an optical detection marker and method of producing the semiconductor die
INFINEON TECHNOLOGIES AG0 citations62
US9082626B2Jul 14, 2015
Conductive pads and methods of formation thereof
INFINEON TECHNOLOGIES AG3 citations62
US11424201B2Aug 23, 2022
Method of forming an aluminum oxide layer, metal surface with aluminum oxide layer, and electronic device
INFINEON TECHNOLOGIES AG0 citations61
US11776927B2Oct 3, 2023
Semiconductor device including a solder compound containing a compound Sn/Sb
INFINEON TECHNOLOGIES AG0 citations59
US11164830B2Nov 2, 2021
Semiconductor chip and method of processing a semiconductor chip
INFINEON TECHNOLOGIES AG0 citations59
US11069644B2Jul 20, 2021
Semiconductor device including a solder compound containing a compound Sn/Sb
INFINEON TECHNOLOGIES AG0 citations59
US10651140B2May 12, 2020
Semiconductor device with metal structure electrically connected to a conductive structure
INFINEON TECHNOLOGIES AG0 citations51
US10090265B2Oct 2, 2018
Semiconductor device with metal structure electrically connected to a conductive structure
INFINEON TECHNOLOGIES AG1 citations51
US10049994B2Aug 14, 2018
Contact pads with sidewall spacers and method of making contact pads with sidewall spacers
INFINEON TECHNOLOGIES AG0 citations51
US9362216B2Jun 7, 2016
Conductive pads and methods of formation thereof
INFINEON TECHNOLOGIES AG0 citations51
US9209080B2Dec 8, 2015
Semiconductor device comprising a protective structure on a chip backside and method of producing the same
INFINEON TECHNOLOGIES AG1 citations51
US10648096B2May 12, 2020
Electrolyte, method of forming a copper layer and method of forming a chip
INFINEON TECHNOLOGIES AG0 citations50
US10607972B2Mar 31, 2020
Semiconductor devices for integration with light emitting chips and modules thereof
INFINEON TECHNOLOGIES AG0 citations50
US9966368B2May 8, 2018
Semiconductor devices for integration with light emitting chips and modules thereof
INFINEON TECHNOLOGIES AG0 citations50
US9887170B2Feb 6, 2018
Multi-layer metal pads
INFINEON TECHNOLOGIES AG0 citations50
US9704839B2Jul 11, 2017
Semiconductor devices for integration with light emitting chips and modules thereof
INFINEON TECHNOLOGIES AG0 citations50
US9293371B2Mar 22, 2016
Method for processing a semiconductor workpiece with metallization
INFINEON TECHNOLOGIES AG1 citations50
US9093385B2Jul 28, 2015
Method for processing a semiconductor workpiece with metallization
INFINEON TECHNOLOGIES AG1 citations50
US10134697B2Nov 20, 2018
Semiconductor chip and method of processing a semiconductor chip
INFINEON TECHNOLOGIES AG0 citations49
US10700019B2Jun 30, 2020
Semiconductor device with compressive interlayer
INFINEON TECHNOLOGIES AG0 citations48
US11127693B2Sep 21, 2021
Barrier for power metallization in semiconductor devices
INFINEON TECHNOLOGIES AG0 citations45
US9627335B2Apr 18, 2017
Method for processing a semiconductor workpiece and semiconductor workpiece
INFINEON TECHNOLOGIES AG0 citations35
GATTERBAUER JOHANN
2 patentsUS8765531B2Jul 1, 2014
Method for manufacturing a metal pad structure of a die, a method for manufacturing a bond pad of a chip, a die arrangement and a chip arrangement
GATTERBAUER JOHANN11 citations80
US8822327B2Sep 2, 2014
Contact pads with sidewall spacers and method of making contact pads with sidewall spacers
GATTERBAUER JOHANN0 citations49