Inventor
YANG JANG-GYOO
US36 patents
⚠️ This page may combine multiple inventors who share the name “YANG JANG-GYOO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
APPLIED MATERIALS INC
29 patentsUS9384997B2Jul 5, 2016
Dry-etch selectivity
APPLIED MATERIALS INC146 citations99
US9373517B2Jun 21, 2016
Semiconductor processing with DC assisted RF power for improved control
APPLIED MATERIALS INC137 citations99
US9144147B2Sep 22, 2015
Semiconductor processing system and methods using capacitively coupled plasma
APPLIED MATERIALS INC188 citations99
US8969212B2Mar 3, 2015
Dry-etch selectivity
APPLIED MATERIALS INC184 citations99
US8357435B2Jan 22, 2013
Flowable dielectric equipment and processes
APPLIED MATERIALS INC160 citations99
US10032606B2Jul 24, 2018
Semiconductor processing with DC assisted RF power for improved control
APPLIED MATERIALS INC94 citations98
US9978564B2May 22, 2018
Chemical control features in wafer process equipment
APPLIED MATERIALS INC106 citations98
US9132436B2Sep 15, 2015
Chemical control features in wafer process equipment
APPLIED MATERIALS INC198 citations98
US7989365B2Aug 2, 2011
Remote plasma source seasoning
APPLIED MATERIALS INC621 citations98
US7955986B2Jun 7, 2011
Capacitively coupled plasma reactor with magnetic plasma control
APPLIED MATERIALS INC70 citations98
US6900596B2May 31, 2005
Capacitively coupled plasma reactor with uniform radial distribution of plasma
APPLIED MATERIALS INC224 citations98
US10354843B2Jul 16, 2019
Chemical control features in wafer process equipment
APPLIED MATERIALS INC40 citations97
US7196283B2Mar 27, 2007
Plasma reactor overhead source power electrode with low arcing tendency, cylindrical gas outlets and shaped surface
APPLIED MATERIALS INC118 citations97
US10062587B2Aug 28, 2018
Pedestal with multi-zone temperature control and multiple purge capabilities
APPLIED MATERIALS INC96 citations96
US9267739B2Feb 23, 2016
Pedestal with multi-zone temperature control and multiple purge capabilities
APPLIED MATERIALS INC52 citations96
US7359177B2Apr 15, 2008
Dual bias frequency plasma reactor with feedback control of E.S.C. voltage using wafer voltage measurement at the bias supply output
APPLIED MATERIALS INC42 citations92
US7141757B2Nov 28, 2006
Plasma reactor with overhead RF source power electrode having a resonance that is virtually pressure independent
APPLIED MATERIALS INC23 citations90
US10056233B2Aug 21, 2018
RPS assisted RF plasma source for semiconductor processing
APPLIED MATERIALS INC7 citations84
US9741545B2Aug 22, 2017
RPS assisted RF plasma source for semiconductor processing
APPLIED MATERIALS INC5 citations84
US9502218B2Nov 22, 2016
RPS assisted RF plasma source for semiconductor processing
APPLIED MATERIALS INC12 citations84
US7972968B2Jul 5, 2011
High density plasma gapfill deposition-etch-deposition process etchant
APPLIED MATERIALS INC9 citations84
US7994872B2Aug 9, 2011
Apparatus for multiple frequency power application
APPLIED MATERIALS INC6 citations74
US10550472B2Feb 4, 2020
Flow control features of CVD chambers
APPLIED MATERIALS INC2 citations73
US10113236B2Oct 30, 2018
Batch curing chamber with gas distribution and individual pumping
APPLIED MATERIALS INC2 citations71
US7375947B2May 20, 2008
Method of feedback control of ESC voltage using wafer voltage measurement at the bias supply output
APPLIED MATERIALS INC3 citations63
US12203171B2Jan 21, 2025
Batch curing chamber with gas distribution and individual pumping
APPLIED MATERIALS INC0 citations62
US12146219B2Nov 19, 2024
Flow control features of CVD chambers
APPLIED MATERIALS INC0 citations62
US11264213B2Mar 1, 2022
Chemical control features in wafer process equipment
APPLIED MATERIALS INC0 citations62
US11408075B2Aug 9, 2022
Batch curing chamber with gas distribution and individual pumping
APPLIED MATERIALS INC0 citations61