Inventor
TSUCHIDA HIDEKAZU
JP47 patents
⚠️ This page may combine multiple inventors who share the name “TSUCHIDA HIDEKAZU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
FUJI ELECTRIC CO LTD
9 patentsUS10665681B2May 26, 2020
Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device
FUJI ELECTRIC CO LTD4 citations73
US10453924B2Oct 22, 2019
Silicon carbide semiconductor substrate, method of manufacturing silicon carbide semiconductor substrate, semiconductor device and method of manufacturing semiconductor device
FUJI ELECTRIC CO LTD2 citations71
US10354867B2Jul 16, 2019
Epitaxial wafer manufacturing method, epitaxial wafer, semiconductor device manufacturing method, and semiconductor device
FUJI ELECTRIC CO LTD1 citations60
US11948976B2Apr 2, 2024
Vertical MOSFET having trench gate structure containing silicon carbide
FUJI ELECTRIC CO LTD0 citations52
US10748763B2Aug 18, 2020
Silicon carbide semiconductor substrate, method of manufacturing a silicon carbide semiconductor device, and silicon carbide semiconductor device
FUJI ELECTRIC CO LTD0 citations50
US12249625B2Mar 11, 2025
Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device
FUJI ELECTRIC CO LTD0 citations48
US11183590B2Nov 23, 2021
Semiconductor device and method of manufacturing semiconductor device
FUJI ELECTRIC CO LTD0 citations47
US10868122B2Dec 15, 2020
Silicon carbide semiconductor device and a method of manufacturing the silicon carbide semiconductor device
FUJI ELECTRIC CO LTD0 citations41
US10522667B2Dec 31, 2019
Silicon carbide epitaxial wafer, silicon carbide insulated gate bipolar transistor, and method of manufacturing the same
FUJI ELECTRIC CO LTD0 citations41
CENTRAL RES INST ELECT
7 patentsUS7081420B2Jul 25, 2006
Method for preparing SiC crystal and SiC crystal
CENTRAL RES INST ELECT20 citations92
US7902054B2Mar 8, 2011
Schottky barrier semiconductor device and method for manufacturing the same
CENTRAL RES INST ELECT13 citations84
US7507650B2Mar 24, 2009
Process for producing Schottky junction type semiconductor device
CENTRAL RES INST ELECT12 citations84
US7737011B2Jun 15, 2010
Method for improving the quality of an SiC crystal and an SiC semiconductor device
CENTRAL RES INST ELECT9 citations83
US7834362B2Nov 16, 2010
SiC crystal semiconductor device
CENTRAL RES INST ELECT4 citations72
US7754589B2Jul 13, 2010
Method for improving the quality of a SiC crystal
CENTRAL RES INST ELECT5 citations72
US8367510B2Feb 5, 2013
Process for producing silicon carbide semiconductor device
CENTRAL RES INST ELECT1 citations51
NUFLARE TECHNOLOGY INC
5 patentsUS9518322B2Dec 13, 2016
Film formation apparatus and film formation method
NUFLARE TECHNOLOGY INC11 citations83
US9873941B2Jan 23, 2018
Film-forming manufacturing apparatus and method
NUFLARE TECHNOLOGY INC5 citations72
US10896831B2Jan 19, 2021
Film forming apparatus
NUFLARE TECHNOLOGY INC1 citations61
US9570337B2Feb 14, 2017
Film formation apparatus and film formation method
NUFLARE TECHNOLOGY INC1 citations51
US10584417B2Mar 10, 2020
Film forming apparatus, susceptor, and film forming method
NUFLARE TECHNOLOGY INC0 citations41
DENSO CORP
5 patentsUS9879359B2Jan 30, 2018
Silicon carbide semiconductor film-forming apparatus and film-forming method using the same
DENSO CORP2 citations72
US12071709B2Aug 27, 2024
Methods for manufacturing silicon carbide single crystal ingot and silicon carbide single crystal wafer
DENSO CORP2 citations70
US12252808B2Mar 18, 2025
Silicon carbide single crystal wafer, and methods for manufacturing silicon carbide single crystal ingot and the silicon carbide single crystal wafer
DENSO CORP0 citations60
US11846040B2Dec 19, 2023
Silicon carbide single crystal
DENSO CORP0 citations59
US10181517B2Jan 15, 2019
Silicon carbide single crystal, silicon carbide single crystal wafer, silicon carbide single crystal epitaxial wafer, and electronic device
DENSO CORP0 citations51
SHOWA DENKO KK
4 patentsUS10262863B2Apr 16, 2019
Method for manufacturing SiC epitaxial wafer by simultaneously utilizing an N-based gas and a CI-based gas, and SiC epitaxial growth apparatus
SHOWA DENKO KK2 citations72
US11906569B2Feb 20, 2024
Semiconductor wafer evaluation apparatus and semiconductor wafer manufacturing method
SHOWA DENKO KK0 citations62
US11600538B2Mar 7, 2023
SiC epitaxial wafer and method for producing SiC epitaxial wafer
SHOWA DENKO KK1 citations62
US11107892B2Aug 31, 2021
SiC epitaxial wafer and method for producing same
SHOWA DENKO KK0 citations61
ISHII RYOSUKE
3 patentsUS8154026B2Apr 10, 2012
Silicon carbide bipolar semiconductor device
ISHII RYOSUKE8 citations81
US8178949B2May 15, 2012
Bipolar semiconductor device, method for producing the same, and method for controlling Zener voltage
ISHII RYOSUKE5 citations60
US8093599B2Jan 10, 2012
Silicon carbide Zener diode
ISHII RYOSUKE0 citations49
KANSAI ELECTRIC POWER CO
3 patentsUS7960737B2Jun 14, 2011
Silicon carbide semiconductor device and manufacturing method therefor
KANSAI ELECTRIC POWER CO2 citations62
US7960257B2Jun 14, 2011
Silicon carbide semiconductor device and manufacturing method therefor
KANSAI ELECTRIC POWER CO1 citations62
US7960738B2Jun 14, 2011
Silicon carbide semiconductor device and manufacturing method therefor
KANSAI ELECTRIC POWER CO1 citations62
SUZUKI KUNIHIKO
2 patentsMOMOSE KENJI
2 patentsUS8716718B2May 6, 2014
Epitaxial SiC single crystal substrate and method of manufacture of epitaxial SiC single crystal substrate
MOMOSE KENJI15 citations81
US8293623B2Oct 23, 2012
Epitaxial SiC single crystal substrate and method of manufacture of epitaxial SiC single crystal substrate
MOMOSE KENJI3 citations60