Inventor

KAMATA ISAHO

JP27 patents

⚠️ This page may combine multiple inventors who share the name “KAMATA ISAHO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

KAMATA ISAHO

NUFLARE TECHNOLOGY INC

Film formation apparatus and film formation method

Film-forming manufacturing apparatus and method

Film forming apparatus

Film formation apparatus and film formation method

Film forming apparatus, susceptor, and film forming method

DENSO CORP

Silicon carbide semiconductor film-forming apparatus and film-forming method using the same

Methods for manufacturing silicon carbide single crystal ingot and silicon carbide single crystal wafer

Silicon carbide single crystal wafer, and methods for manufacturing silicon carbide single crystal ingot and the silicon carbide single crystal wafer

Silicon carbide single crystal

Silicon carbide single crystal, silicon carbide single crystal wafer, silicon carbide single crystal epitaxial wafer, and electronic device

SHOWA DENKO KK

Method for manufacturing SiC epitaxial wafer by simultaneously utilizing an N-based gas and a CI-based gas, and SiC epitaxial growth apparatus

Semiconductor wafer evaluation apparatus and semiconductor wafer manufacturing method

SiC epitaxial wafer and method for producing same

KANSAI ELECTRIC POWER CO

Silicon carbide semiconductor device and manufacturing method therefor

Silicon carbide semiconductor device and manufacturing method therefor

Silicon carbide semiconductor device and manufacturing method therefor

CENTRAL RES INST ELECT

Method for preparing SiC crystal and SiC crystal

Process for producing silicon carbide semiconductor device

SUZUKI KUNIHIKO

Manufacturing apparatus and method for semiconductor device and cleaning method of manufacturing apparatus for semiconductor

Film-forming apparatus and film-forming method

MOMOSE KENJI

Epitaxial SiC single crystal substrate and method of manufacture of epitaxial SiC single crystal substrate

Epitaxial SiC single crystal substrate and method of manufacture of epitaxial SiC single crystal substrate

ISHII RYOSUKE

Silicon carbide bipolar semiconductor device

KANSAI ELECTRIC CO INC

Silicon carbide semiconductor device and manufacturing method therefor

CENTRAL RES INST ELECTRIC POWER IND

Method and apparatus for manufacturing silicon carbide single crystal, and silicon carbide single crystal ingot

MIYANAGI TOSHIYUKI

Method for recovering an on-state forward voltage and, shrinking stacking faults in bipolar semiconductor devices, and the bipolar semiconductor devices

MIRISE Technologies Corporation

Silicon carbide ingot including screw dislocations