Inventor

OTT JOHN A

US65 patents

⚠️ This page may combine multiple inventors who share the name “OTT JOHN A”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

OTT JOHN A

IBM

High speed composite p-channel Si/SiGe heterostructure for field effect devices

High speed composite p-channel Si/SiGe heterostructure for field effect devices

High performance strained silicon FinFETs device and method for forming same

Use of graphene to limit copper surface oxidation, diffusion and electromigration in interconnect structures

Nanowire MOSFET with doped epitaxial contacts for source and drain

High germanium content silicon germanium fins

Stacked strained and strain-relaxed hexagonal nanowires

Automatic defect detection and classification for high throughput electron channeling contrast imaging

Multi-beam electron microscope for electron channeling contrast imaging of semiconductor material

Method of forming high-germanium content silicon germanium alloy fins on insulator

Polarization free gallium nitride-based photonic devices on nanopatterned silicon

Selective epitaxy using epitaxy-prevention layers

Stacked strained and strain-relaxed hexagonal nanowires

Formation of FinFET junction

High germanium content silicon germanium fins

Controlled spalling of group III nitrides containing an embedded spall releasing plane

Planar substrate with selected semiconductor crystal orientations formed by localized amorphization and recrystallization of stacked template layers

Method of forming a semiconductor structure using a non-oxygen chalcogen passivation treatment

Buffer layer for high performing and low light degraded solar cells

Electrochemical switching device with protective encapsulation

Post growth heteroepitaxial layer separation for defect reduction in heteroepitaxial films

Selective epitaxy using epitaxy-prevention layers

Automatic alignment for high throughput electron channeling contrast imaging

Post growth defect reduction for heteroepitaxial materials

Semiconductor devices having nanochannels confined by nanometer-spaced electrodes

Quasi-hydrophobic Si-Si wafer bonding using hydrophilic Si surfaces and dissolution of interfacial bonding oxide

Electron channeling pattern acquisition from small crystalline areas

Method of making an anode structure containing a porous region

High speed composite p-channel Si/SiGe heterostructure for field effect devices

Epitaxial and polycrystalline growth of Si1-x-yGexCy and Si1-yCy alloy layers on Si by UHV-CVD

MRAM with high-aspect ratio bottom electrode

Post growth heteroepitaxial layer separation for defect reduction in heteroepitaxial films

Formation of FinFET junction

Post growth heteroepitaxial layer separation for defect reduction in heteroepitaxial films

Electron channeling pattern acquisition from small crystalline areas

Selective epitaxy using epitaxy-prevention layers

Formation of FinFET junction

Electron channeling pattern acquisition from small crystalline areas

Method of forming high-germanium content silicon germanium alloy fins on insulator

BONILLA GRISELDA

Graphene cap for copper interconnect structures

Method of forming a graphene cap for copper interconnect structures

OTT JOHN A

Use of graphene to limit copper surface oxidation, diffusion and electromigration in interconnect structures

Use of graphene to limit copper surface oxidation, diffusion and electromigration in interconnect structures

SAMSUNG ELECTRONICS CO LTD

Method of forming a graphene cap for copper interconnect structures

BEDELL STEPHEN W

Method of large-area circuit layout recognition

DE SOUZA JOEL P

Quasi-hydrophobic Si-Si wafer bonding using hydrophilic Si surfaces and dissolution of interfacial bonding oxide

YIN HAIZHOU

Hybrid orientation semiconductor structure with reduced boundary defects and method of forming same

CHU JACK O

Nanowire MOSFET with doped epitaxial contacts for source and drain

HARRER STEFAN

Semiconductor devices having nanochannels confined by nanometer-spaced electrodes

DIMITRAKOPOULOS CHRISTOS D

Graphene-containing semiconductor structures and devices on a silicon carbide substrate having a defined miscut angle